JPS6448483A - Photoelectronic integrated element and manufacture thereof - Google Patents

Photoelectronic integrated element and manufacture thereof

Info

Publication number
JPS6448483A
JPS6448483A JP20422387A JP20422387A JPS6448483A JP S6448483 A JPS6448483 A JP S6448483A JP 20422387 A JP20422387 A JP 20422387A JP 20422387 A JP20422387 A JP 20422387A JP S6448483 A JPS6448483 A JP S6448483A
Authority
JP
Japan
Prior art keywords
layer
active layer
inp
grow
allowed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20422387A
Other languages
Japanese (ja)
Inventor
Hideto Furuyama
Nobuo Suzuki
Yuzo Hirayama
Motoyasu Morinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20422387A priority Critical patent/JPS6448483A/en
Priority to EP88304737A priority patent/EP0293185B1/en
Priority to DE3887567T priority patent/DE3887567T2/en
Priority to US07/198,866 priority patent/US4862474A/en
Publication of JPS6448483A publication Critical patent/JPS6448483A/en
Priority to US07/383,099 priority patent/US4974232A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve yield, reliability, and characteristics by making crystal layers to be common as much as possible and by forming fine patterns simultaneously. CONSTITUTION:A n-InP active layer 2, GaInAsP active layer 3, and p-InP clad layer 4 are allowed to grow on a SI-InP substrate 1 and the pattern is formed by a photoresist 5. This photoresist or pattern-transferred SiO2 allows pattern transfer to the active layer and a p-InP embedding layer 6 and p-GaInAsP cap layer 7 are allowed to grow on the entire surface after eliminating mask. Then, P electrodes 8a and 8b are allowed to grow and selective mesa etching is performed up to the active layer 3 and a source electrode 9a and drain electrode 9b are formed in self-aligned manner. In this manner, the process is made to be common and semiconductor crystal layer is made to be common to drastically improve reliability, yield, and characteristics of elements.
JP20422387A 1987-05-26 1987-08-19 Photoelectronic integrated element and manufacture thereof Pending JPS6448483A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP20422387A JPS6448483A (en) 1987-08-19 1987-08-19 Photoelectronic integrated element and manufacture thereof
EP88304737A EP0293185B1 (en) 1987-05-26 1988-05-25 Semiconductor laser device and method for manufacturing the same
DE3887567T DE3887567T2 (en) 1987-05-26 1988-05-25 Semiconductor laser device and method for its manufacture.
US07/198,866 US4862474A (en) 1987-05-26 1988-05-26 Semicondutor laser device
US07/383,099 US4974232A (en) 1987-05-26 1989-07-21 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20422387A JPS6448483A (en) 1987-08-19 1987-08-19 Photoelectronic integrated element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6448483A true JPS6448483A (en) 1989-02-22

Family

ID=16486877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20422387A Pending JPS6448483A (en) 1987-05-26 1987-08-19 Photoelectronic integrated element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6448483A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04211135A (en) * 1989-12-27 1992-08-03 Electron & Telecommun Res Inst Manufacture of junction field-effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04211135A (en) * 1989-12-27 1992-08-03 Electron & Telecommun Res Inst Manufacture of junction field-effect transistor

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