JPS56137635A - Ion etching method - Google Patents

Ion etching method

Info

Publication number
JPS56137635A
JPS56137635A JP4023980A JP4023980A JPS56137635A JP S56137635 A JPS56137635 A JP S56137635A JP 4023980 A JP4023980 A JP 4023980A JP 4023980 A JP4023980 A JP 4023980A JP S56137635 A JPS56137635 A JP S56137635A
Authority
JP
Japan
Prior art keywords
silicon
cathode
silicon oxide
etching
electric discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4023980A
Other languages
Japanese (ja)
Inventor
Haruo Okano
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4023980A priority Critical patent/JPS56137635A/en
Publication of JPS56137635A publication Critical patent/JPS56137635A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To selectively etch high melting-point metals such as silicon, molybdenum, tungsten, etc. of monocrystal and multicrystal form and their silicides in a sample chamber with gaseous ion by introducing a single gas of halogen element in to an electric discharge chamber and dissociating it. CONSTITUTION:A permanent magnet 7 is deposited in the center of a cathode 6 and a magnetic field and a DC field between an anode 1 and a cathode 6 are caused to directly cross each other in an electric discharge clearance 2. Cl2 is introduced 3 and impacted by an electronic cycloid motion so that it is ionized to become a plasma. If the cathode 6 is maintained at a negative potential, a positive ion beam 5 is pulled out of a window 4, etching an objected to be etched 12 on a rotary table 14 inside a sample chamber. If an incident angle is set at theta and a gas containing carbon and halogen such as CCl4 is used as an etching gas to etch silicon oxide and silicon, silicon is quickly etched because the reactivity of dissociated Cl atom and silicon oxide is low. If bromine and iodine are used, the selectivity of silicon oxide is further enhanced, thus enabling a high-speed and selective etching.
JP4023980A 1980-03-31 1980-03-31 Ion etching method Pending JPS56137635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4023980A JPS56137635A (en) 1980-03-31 1980-03-31 Ion etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4023980A JPS56137635A (en) 1980-03-31 1980-03-31 Ion etching method

Publications (1)

Publication Number Publication Date
JPS56137635A true JPS56137635A (en) 1981-10-27

Family

ID=12575158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4023980A Pending JPS56137635A (en) 1980-03-31 1980-03-31 Ion etching method

Country Status (1)

Country Link
JP (1) JPS56137635A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111432A (en) * 1985-11-08 1987-05-22 Fujitsu Ltd Manufacture of semiconductor device
US4698126A (en) * 1985-03-18 1987-10-06 U.S. Philips Corporation Method of manufacturing a semiconductor device by plasma etching of a double layer
JPH0658829U (en) * 1993-01-26 1994-08-16 タイジ株式会社 Onsen
US5874362A (en) * 1986-12-19 1999-02-23 Applied Materials, Inc. Bromine and iodine etch process for silicon and silicides

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368075A (en) * 1976-11-29 1978-06-17 Nec Corp Manufacture of element containing micro pattern
JPS5460236A (en) * 1977-10-21 1979-05-15 Mitsubishi Electric Corp Etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368075A (en) * 1976-11-29 1978-06-17 Nec Corp Manufacture of element containing micro pattern
JPS5460236A (en) * 1977-10-21 1979-05-15 Mitsubishi Electric Corp Etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4698126A (en) * 1985-03-18 1987-10-06 U.S. Philips Corporation Method of manufacturing a semiconductor device by plasma etching of a double layer
JPS62111432A (en) * 1985-11-08 1987-05-22 Fujitsu Ltd Manufacture of semiconductor device
US5874362A (en) * 1986-12-19 1999-02-23 Applied Materials, Inc. Bromine and iodine etch process for silicon and silicides
JPH0658829U (en) * 1993-01-26 1994-08-16 タイジ株式会社 Onsen

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