JPS5776841A - Etching method of silicon oxide film - Google Patents
Etching method of silicon oxide filmInfo
- Publication number
- JPS5776841A JPS5776841A JP15260380A JP15260380A JPS5776841A JP S5776841 A JPS5776841 A JP S5776841A JP 15260380 A JP15260380 A JP 15260380A JP 15260380 A JP15260380 A JP 15260380A JP S5776841 A JPS5776841 A JP S5776841A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- electrons
- ion
- ion gun
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract 6
- 238000005530 etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 150000002500 ions Chemical class 0.000 abstract 8
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 125000001153 fluoro group Chemical group F* 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052753 mercury Inorganic materials 0.000 abstract 1
- 230000007935 neutral effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To make it possible to perform fine machining in the case the silicon oxide film is etched by irradiating positive ions provided with fluorine atoms on the surface of the silicon oxide film, by irradiating light, whose energy takes out electrons from the base material of the silicon oxide film lifts the electrons up to the conduction band of the silicon oxide film. CONSTITUTION:Etching gas C2F6 is introduced into an ion gun 21. When an ion stream from the ion gun 21 passes a mass spectrograph 23 in a high vacuum container 20, the electrons 25 mixed in the ion stream are returned back to the direction to the ion gun 21, and a neutral gas stream 24 flows to an evacuating device 31. The remaining positive ions 26 are deflected by the magnetic field when they pass between a pair of permanent magnets. Only selected ions with appropriate mass reach a specimen surface 28. Under this state the light whose wavelength is at the vicinity of 360nm emitted from a high voltage mercury lamp is irradiated on the specimen surface through a quartz window, and the surface of the silicon oxide film is etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15260380A JPS5776841A (en) | 1980-10-30 | 1980-10-30 | Etching method of silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15260380A JPS5776841A (en) | 1980-10-30 | 1980-10-30 | Etching method of silicon oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776841A true JPS5776841A (en) | 1982-05-14 |
Family
ID=15544011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15260380A Pending JPS5776841A (en) | 1980-10-30 | 1980-10-30 | Etching method of silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5966124A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Surface treating apparatus |
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
-
1980
- 1980-10-30 JP JP15260380A patent/JPS5776841A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5966124A (en) * | 1982-10-08 | 1984-04-14 | Hitachi Ltd | Surface treating apparatus |
| US4734158A (en) * | 1987-03-16 | 1988-03-29 | Hughes Aircraft Company | Molecular beam etching system and method |
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