JPS56146238A - Etching method of germanium semiconductor element and etching liquid used therefor - Google Patents

Etching method of germanium semiconductor element and etching liquid used therefor

Info

Publication number
JPS56146238A
JPS56146238A JP5082180A JP5082180A JPS56146238A JP S56146238 A JPS56146238 A JP S56146238A JP 5082180 A JP5082180 A JP 5082180A JP 5082180 A JP5082180 A JP 5082180A JP S56146238 A JPS56146238 A JP S56146238A
Authority
JP
Japan
Prior art keywords
etching
etched
speed
germanium wafer
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5082180A
Other languages
Japanese (ja)
Inventor
Shuzo Kagawa
Katsuji Honma
Takao Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5082180A priority Critical patent/JPS56146238A/en
Publication of JPS56146238A publication Critical patent/JPS56146238A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Weting (AREA)

Abstract

PURPOSE:To apply an etching in easy in controlling an etching condition and good operativity by a method wherein a germanium wafer is etched with an etching liquid composed of hydrochloric acid, hydrogen peroxide and water. CONSTITUTION:The etching liquid composed of the hydrochloric acid: hydrogen peroxide: water=1:1:6 is made and the germanium wafer is put in the liquid to be etched on the surface. As understood from the drawing, the germanium wafer in the surface orientation (111) is etched at the termperature of 20 deg. at the speed of approximately 8mum/100min. The etching speed is increased also accompanying the temperature rise of the etching liquid. However, the etching speed is so slow that the etching depth is easily controlled. Further, the etching condition is satisfactory and smooth etching surface can be obtained. A dark current can be reduced by using such an etching method for manufacturing a mesa-type photodiode.
JP5082180A 1980-04-16 1980-04-16 Etching method of germanium semiconductor element and etching liquid used therefor Pending JPS56146238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5082180A JPS56146238A (en) 1980-04-16 1980-04-16 Etching method of germanium semiconductor element and etching liquid used therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5082180A JPS56146238A (en) 1980-04-16 1980-04-16 Etching method of germanium semiconductor element and etching liquid used therefor

Publications (1)

Publication Number Publication Date
JPS56146238A true JPS56146238A (en) 1981-11-13

Family

ID=12869422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5082180A Pending JPS56146238A (en) 1980-04-16 1980-04-16 Etching method of germanium semiconductor element and etching liquid used therefor

Country Status (1)

Country Link
JP (1) JPS56146238A (en)

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