JPS5736865A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5736865A
JPS5736865A JP11238780A JP11238780A JPS5736865A JP S5736865 A JPS5736865 A JP S5736865A JP 11238780 A JP11238780 A JP 11238780A JP 11238780 A JP11238780 A JP 11238780A JP S5736865 A JPS5736865 A JP S5736865A
Authority
JP
Japan
Prior art keywords
electrode
wiring
region
semiconductor device
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11238780A
Other languages
Japanese (ja)
Other versions
JPS6161548B2 (en
Inventor
Hideto Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11238780A priority Critical patent/JPS5736865A/en
Publication of JPS5736865A publication Critical patent/JPS5736865A/en
Publication of JPS6161548B2 publication Critical patent/JPS6161548B2/ja
Priority to JP1202559A priority patent/JPH03141646A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the integration and the high speed of a semiconductor device by contacting the lead of a gate electrode having two-layer configuration made of polysilicon containing impurity and metal partly with a buried contacting region in a semiconductor substrate. CONSTITUTION:Source and drain regions 5a, 5b and wiring diffused region 6 are formed in a semiconductor substrate 1, polysilicons 3b, 4b containing impurity, gate electrode 3 made of metals 3a, 4a and lead electrode 4 from the electrode 3 are formed via an oxidized film, the impurity in the polysilicon 4b is diffused in the substrate in the part contacted with the leading electrode 4 and the wiring diffused region 6, and a buried contacting region 9 is formed. Since the electric connection of the gate electrode to the leading electrode and the wiring diffused region can be performed without intermediary of the other metallic wiring layer in this manner, the integration and the high speed of the semiconductor device can be improved.
JP11238780A 1980-08-14 1980-08-14 Semiconductor device Granted JPS5736865A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11238780A JPS5736865A (en) 1980-08-14 1980-08-14 Semiconductor device
JP1202559A JPH03141646A (en) 1980-08-14 1989-08-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11238780A JPS5736865A (en) 1980-08-14 1980-08-14 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1202559A Division JPH03141646A (en) 1980-08-14 1989-08-03 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5736865A true JPS5736865A (en) 1982-02-27
JPS6161548B2 JPS6161548B2 (en) 1986-12-26

Family

ID=14585396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11238780A Granted JPS5736865A (en) 1980-08-14 1980-08-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5736865A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288249A (en) * 1989-04-28 1990-11-28 Toshiba Corp Semiconductor integrated circuit and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01236158A (en) * 1988-03-14 1989-09-21 Sanyo Electric Co Ltd Form storing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127784A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Semiconductor device
JPS5411674A (en) * 1977-06-28 1979-01-27 Nippon Denso Co Ltd Semiconductor device of mesa type

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127784A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Semiconductor device
JPS5411674A (en) * 1977-06-28 1979-01-27 Nippon Denso Co Ltd Semiconductor device of mesa type

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02288249A (en) * 1989-04-28 1990-11-28 Toshiba Corp Semiconductor integrated circuit and manufacture thereof

Also Published As

Publication number Publication date
JPS6161548B2 (en) 1986-12-26

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