JPS5263069A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5263069A
JPS5263069A JP13911875A JP13911875A JPS5263069A JP S5263069 A JPS5263069 A JP S5263069A JP 13911875 A JP13911875 A JP 13911875A JP 13911875 A JP13911875 A JP 13911875A JP S5263069 A JPS5263069 A JP S5263069A
Authority
JP
Japan
Prior art keywords
metal
semiconductor device
gold
wondows
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13911875A
Other languages
Japanese (ja)
Other versions
JPS5942452B2 (en
Inventor
Makoto Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13911875A priority Critical patent/JPS5942452B2/en
Publication of JPS5263069A publication Critical patent/JPS5263069A/en
Publication of JPS5942452B2 publication Critical patent/JPS5942452B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: In a multilayer electrode containing gold which is formed by opening wondows in the SiO2 film over diffusion regions, the surface and side faces of gold are covered with other metal or metal alloy, whereby the erosion resistance of the electrode metal is improved.
COPYRIGHT: (C)1977,JPO&Japio
JP13911875A 1975-11-19 1975-11-19 Manufacturing method of semiconductor device Expired JPS5942452B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13911875A JPS5942452B2 (en) 1975-11-19 1975-11-19 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13911875A JPS5942452B2 (en) 1975-11-19 1975-11-19 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5263069A true JPS5263069A (en) 1977-05-25
JPS5942452B2 JPS5942452B2 (en) 1984-10-15

Family

ID=15237905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13911875A Expired JPS5942452B2 (en) 1975-11-19 1975-11-19 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5942452B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4742014A (en) * 1985-05-10 1988-05-03 Texas Instruments Incorporated Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4742014A (en) * 1985-05-10 1988-05-03 Texas Instruments Incorporated Method of making metal contacts and interconnections for VLSI devices with copper as a primary conductor

Also Published As

Publication number Publication date
JPS5942452B2 (en) 1984-10-15

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