JPS5615076A - Manuacture of semiconductor device - Google Patents

Manuacture of semiconductor device

Info

Publication number
JPS5615076A
JPS5615076A JP9206779A JP9206779A JPS5615076A JP S5615076 A JPS5615076 A JP S5615076A JP 9206779 A JP9206779 A JP 9206779A JP 9206779 A JP9206779 A JP 9206779A JP S5615076 A JPS5615076 A JP S5615076A
Authority
JP
Japan
Prior art keywords
layer
gate
oxide film
film
gate electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9206779A
Other languages
Japanese (ja)
Inventor
Tadanaka Yoneda
Eizo Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9206779A priority Critical patent/JPS5615076A/en
Publication of JPS5615076A publication Critical patent/JPS5615076A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0198—Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enhance the dielectric strength between the gate electrodes of the first layer and the second layer and to reduce the unevenness of the surface of the semiconductor device by a method wherein after a pattern of the first gate electrode is formed, the device is heat treated in a gas containing P2O5. CONSTITUTION:The first gate oxide film 11 is formed on an Si substrate 10, and the patterns of the gate electrodes 12, 12' of the first layer is formed by photoetching a polycrystalline Si film. It is heated in the gas containing phosphorus to form SiO2 films 13, 13' containing phosphorus on the surface of the first layer gate electrodes 12, 12', and an SiO2 film 14 containing phosphorus on the surface of the first gate oxide film 11. By heating in steam, the upper part of the gate electrodes 12, 12' are oxidized quickly to form SiO2 films 15, 15' and the upper part of the first gate oxide film 11 is scarcely oxidized to form the second gate oxide film 16. Then the second layer gate electrode 17, a CVD SiO2 film 18 are formed and an Al wiring 19 is formed.
JP9206779A 1979-07-19 1979-07-19 Manuacture of semiconductor device Pending JPS5615076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9206779A JPS5615076A (en) 1979-07-19 1979-07-19 Manuacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9206779A JPS5615076A (en) 1979-07-19 1979-07-19 Manuacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5615076A true JPS5615076A (en) 1981-02-13

Family

ID=14044116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9206779A Pending JPS5615076A (en) 1979-07-19 1979-07-19 Manuacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5615076A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151106A (en) * 1983-02-04 1984-08-29 Toshiba Corp Optical waveguide device
JP2006228889A (en) * 2005-02-16 2006-08-31 Nec Electronics Corp Charge transfer element and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59151106A (en) * 1983-02-04 1984-08-29 Toshiba Corp Optical waveguide device
JP2006228889A (en) * 2005-02-16 2006-08-31 Nec Electronics Corp Charge transfer element and its manufacturing method

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