JPS6477955A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477955A JPS6477955A JP62235657A JP23565787A JPS6477955A JP S6477955 A JPS6477955 A JP S6477955A JP 62235657 A JP62235657 A JP 62235657A JP 23565787 A JP23565787 A JP 23565787A JP S6477955 A JPS6477955 A JP S6477955A
- Authority
- JP
- Japan
- Prior art keywords
- gate oxide
- region
- oxide film
- film
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To remove heat treatment at a high temperature after emitter diffusion, and to control hFE with high accuracy by forming a gate oxide film and a passivation film in a MOS transistor before the process of the base diffusion and emitter diffusion of a bipolar transistor. CONSTITUTION:N-type buried regions 2 are shaped selectively to a P-type semiconductor substrate 1, and an N-type epitaxial layer 3 is grown. A gate oxide film 9 is grown, and an silicon nitride film 11 is grown. A P-type impurity 14 is introduced into the silicon substrate through the silicon nitride film 11 and the gate oxide film 9 in a region as an emitter. Ions are implanted only into an external base region 15 in a bipolar transistor and a source region 6 and a drain region 7 in a MOS transistor. Accordingly, one gate oxide film and a surface protective film are formed before an impurity region in the bipolar transistor is shaped, thus reducing the potentiality of exposure to severe heat treatment after the impurity is introduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62235657A JPS6477955A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62235657A JPS6477955A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6477955A true JPS6477955A (en) | 1989-03-23 |
| JPH0579186B2 JPH0579186B2 (en) | 1993-11-01 |
Family
ID=16989262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62235657A Granted JPS6477955A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6477955A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478761A (en) * | 1989-11-24 | 1995-12-26 | Mitsubishi Denki Kabushiki Kaisha | Method of producing semiconductor device having first and second type field effect transistors |
| JP2009174908A (en) * | 2008-01-22 | 2009-08-06 | National Institute For Agro-Environmental Science | Gas sampling device |
-
1987
- 1987-09-18 JP JP62235657A patent/JPS6477955A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478761A (en) * | 1989-11-24 | 1995-12-26 | Mitsubishi Denki Kabushiki Kaisha | Method of producing semiconductor device having first and second type field effect transistors |
| JP2009174908A (en) * | 2008-01-22 | 2009-08-06 | National Institute For Agro-Environmental Science | Gas sampling device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0579186B2 (en) | 1993-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |