JPS5617632A - Converging method for ion - Google Patents

Converging method for ion

Info

Publication number
JPS5617632A
JPS5617632A JP9295879A JP9295879A JPS5617632A JP S5617632 A JPS5617632 A JP S5617632A JP 9295879 A JP9295879 A JP 9295879A JP 9295879 A JP9295879 A JP 9295879A JP S5617632 A JPS5617632 A JP S5617632A
Authority
JP
Japan
Prior art keywords
substrate
converging
electrode
ion
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9295879A
Other languages
Japanese (ja)
Inventor
Akira Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9295879A priority Critical patent/JPS5617632A/en
Publication of JPS5617632A publication Critical patent/JPS5617632A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To converge ions in various shape on the surface of a substrate without being disturbed by neutral beams, by applying a voltage negative to an ion source to the substrate, and by setting a converging electrode having a hole corresponding to the converging shape of an ion beam in front of the substrate and having lower electric potential than that of the substrate. CONSTITUTION:In passing S evaporated from an S cell 12 through a thermion impulsive type ion source composed of an anode 7 and a filament 5 for thermion emission, a portion of the S is ionized. The S ions are accelerated in the direction of a substrate 3 by the negative voltage applied to the substrate 3, and its orbit is bent by a converging electrode 4 which is arranged just before the substrate 3 and is grounded electrically. Neutral beam of S and neutral beam of Zn evaporated from a Zn cell 9 are allowed to pass through the hole 15 of the converging electrode without being affected by the electric field thereby growing ZnS film on the surface of the substrate 3. Said converging ion beams are allowed to arrive at the ZnS film to form desired pattern in accordance with the shape of the hole of the electrode 4.
JP9295879A 1979-07-20 1979-07-20 Converging method for ion Pending JPS5617632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9295879A JPS5617632A (en) 1979-07-20 1979-07-20 Converging method for ion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9295879A JPS5617632A (en) 1979-07-20 1979-07-20 Converging method for ion

Publications (1)

Publication Number Publication Date
JPS5617632A true JPS5617632A (en) 1981-02-19

Family

ID=14068953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9295879A Pending JPS5617632A (en) 1979-07-20 1979-07-20 Converging method for ion

Country Status (1)

Country Link
JP (1) JPS5617632A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6176662A (en) * 1984-09-21 1986-04-19 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6176662A (en) * 1984-09-21 1986-04-19 Nippon Telegr & Teleph Corp <Ntt> Method and device for forming thin film

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