JPS5623740A - Multilayer liquid phase epitaxial growing method - Google Patents

Multilayer liquid phase epitaxial growing method

Info

Publication number
JPS5623740A
JPS5623740A JP9940879A JP9940879A JPS5623740A JP S5623740 A JPS5623740 A JP S5623740A JP 9940879 A JP9940879 A JP 9940879A JP 9940879 A JP9940879 A JP 9940879A JP S5623740 A JPS5623740 A JP S5623740A
Authority
JP
Japan
Prior art keywords
hcl
substrate
xalxas
retained
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9940879A
Other languages
Japanese (ja)
Inventor
Katsuji Seki
Masaru Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9940879A priority Critical patent/JPS5623740A/en
Publication of JPS5623740A publication Critical patent/JPS5623740A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain a uniform and preferable epitaxial layer by easily controlling and operating an etching gas on Ga1-xAlxAs surface by employing HCl instead of GaCl. CONSTITUTION:A conventional method of producing GaCl from the reaction of AsCl2 with Ga melt difficult to control the temperature of the AsCl3 with high toxicity and difficult operation. When a furnace is uniformly heated in temperature distribution using HCl and a Ga1-xAlxAs substrate is etched by bringing it directly into contact with the substrate, the HCl can be fed into the furnace as retained at room temperature. When Ga1-xAlxAs or GaAs is epitaxially grown in vapor phase on the etched substrate, it improves the crystallinity. In this case, the substrate is retained at 750-850 deg.C with HCl density of 0.01-1%. It may be retained at 830- 850 deg.C with 0.01% of HC for approx. 3min, and with 1% of HCl for approx. 0.06min. If the temperatue is raised higher than 850 deg.C, the surface of the substrate is roughed, while if the temperature is lowered lower than 750 deg.C, it is irregularly etched. If the HCl is contained higher than 1%, the surface of the substrate is roughed, while if it is contained lower than 0.01%, it is difficult to control the HCl. This configuration can obtain uniform epitaxial layer with preferable crystallinity.
JP9940879A 1979-08-06 1979-08-06 Multilayer liquid phase epitaxial growing method Pending JPS5623740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9940879A JPS5623740A (en) 1979-08-06 1979-08-06 Multilayer liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9940879A JPS5623740A (en) 1979-08-06 1979-08-06 Multilayer liquid phase epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS5623740A true JPS5623740A (en) 1981-03-06

Family

ID=14246649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9940879A Pending JPS5623740A (en) 1979-08-06 1979-08-06 Multilayer liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5623740A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62251048A (en) * 1986-04-24 1987-10-31 Okuma Mach Works Ltd Cutting force monitoring method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515956A (en) * 1974-07-04 1976-01-19 Nippon Telegraph & Telephone
JPS51114067A (en) * 1975-04-01 1976-10-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth towards the top of alxga1-xas base

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515956A (en) * 1974-07-04 1976-01-19 Nippon Telegraph & Telephone
JPS51114067A (en) * 1975-04-01 1976-10-07 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth towards the top of alxga1-xas base

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62251048A (en) * 1986-04-24 1987-10-31 Okuma Mach Works Ltd Cutting force monitoring method

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