JPS5624925A - Selective growth of silicon - Google Patents

Selective growth of silicon

Info

Publication number
JPS5624925A
JPS5624925A JP10027279A JP10027279A JPS5624925A JP S5624925 A JPS5624925 A JP S5624925A JP 10027279 A JP10027279 A JP 10027279A JP 10027279 A JP10027279 A JP 10027279A JP S5624925 A JPS5624925 A JP S5624925A
Authority
JP
Japan
Prior art keywords
film
growth
substrate
layer
growth layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10027279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6226569B2 (de
Inventor
Masao Kawamura
Hiroji Saida
Akira Sato
Masahiko Kogirima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10027279A priority Critical patent/JPS5624925A/ja
Publication of JPS5624925A publication Critical patent/JPS5624925A/ja
Publication of JPS6226569B2 publication Critical patent/JPS6226569B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition

Landscapes

  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
JP10027279A 1979-08-08 1979-08-08 Selective growth of silicon Granted JPS5624925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10027279A JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10027279A JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Publications (2)

Publication Number Publication Date
JPS5624925A true JPS5624925A (en) 1981-03-10
JPS6226569B2 JPS6226569B2 (de) 1987-06-09

Family

ID=14269561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10027279A Granted JPS5624925A (en) 1979-08-08 1979-08-08 Selective growth of silicon

Country Status (1)

Country Link
JP (1) JPS5624925A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605846A (en) * 1994-02-23 1997-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5653802A (en) * 1988-03-27 1997-08-05 Canon Kabushiki Kaisha Method for forming crystal
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6984550B2 (en) 2001-02-28 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012069964A (ja) * 2005-09-12 2012-04-05 Internatl Business Mach Corp <Ibm> 窒化物上へゲルマニウム・スペーサを選択的に堆積するための構造及び方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5733369A (en) * 1986-03-28 1998-03-31 Canon Kabushiki Kaisha Method for forming crystal
US5853478A (en) * 1986-03-28 1998-12-29 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5846320A (en) * 1986-03-31 1998-12-08 Canon Kabushiki Kaisha Method for forming crystal and crystal article obtained by said method
US5653802A (en) * 1988-03-27 1997-08-05 Canon Kabushiki Kaisha Method for forming crystal
US5605846A (en) * 1994-02-23 1997-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US7235828B2 (en) 1994-02-23 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with residual nickel from crystallization of semiconductor film
US7749819B2 (en) 1994-02-23 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US6984550B2 (en) 2001-02-28 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7405115B2 (en) 2001-02-28 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9330940B2 (en) 2001-02-28 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2012069964A (ja) * 2005-09-12 2012-04-05 Internatl Business Mach Corp <Ibm> 窒化物上へゲルマニウム・スペーサを選択的に堆積するための構造及び方法

Also Published As

Publication number Publication date
JPS6226569B2 (de) 1987-06-09

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