JPS562664A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS562664A
JPS562664A JP7848379A JP7848379A JPS562664A JP S562664 A JPS562664 A JP S562664A JP 7848379 A JP7848379 A JP 7848379A JP 7848379 A JP7848379 A JP 7848379A JP S562664 A JPS562664 A JP S562664A
Authority
JP
Japan
Prior art keywords
resister
protective circuit
input gate
igfet
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7848379A
Other languages
Japanese (ja)
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7848379A priority Critical patent/JPS562664A/en
Publication of JPS562664A publication Critical patent/JPS562664A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase an electrostatic withstand voltage without making a circuit change when using a polycrystalline Si resister as an input gate protective circuit of IGFET or a part of an input gate protective circuit by having a straight lined type resister instead of a plane type one. CONSTITUTION:When forming a resister 3, for use in protecting an input gate, between a bonding fine wire connecting metal 1 consisting an IGFET and an input protective circuit wiring metal 6 with an intermediate of connectors 2 and 5, the resister is formed making use of a polycrystalline Si, wherein the resister is made in a straight line type instead of curving or bending a plane shape. As a result, the applied voltage is concentrated and as there is no bent section causing a local heating, chances of cutting due to solution of the resister 3 can be reduced and the electrostatic breakdown withstand can be improved.
JP7848379A 1979-06-21 1979-06-21 Semiconductor device Pending JPS562664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7848379A JPS562664A (en) 1979-06-21 1979-06-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7848379A JPS562664A (en) 1979-06-21 1979-06-21 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS562664A true JPS562664A (en) 1981-01-12

Family

ID=13663230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7848379A Pending JPS562664A (en) 1979-06-21 1979-06-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS562664A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105369A (en) * 1982-12-07 1984-06-18 Seiko Epson Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105369A (en) * 1982-12-07 1984-06-18 Seiko Epson Corp Semiconductor device

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