JPS5629370A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS5629370A
JPS5629370A JP10536079A JP10536079A JPS5629370A JP S5629370 A JPS5629370 A JP S5629370A JP 10536079 A JP10536079 A JP 10536079A JP 10536079 A JP10536079 A JP 10536079A JP S5629370 A JPS5629370 A JP S5629370A
Authority
JP
Japan
Prior art keywords
region
film
deposited
mos transistor
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10536079A
Other languages
Japanese (ja)
Inventor
Toshio Hirofuji
Kenji Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10536079A priority Critical patent/JPS5629370A/en
Publication of JPS5629370A publication Critical patent/JPS5629370A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Abstract

PURPOSE:To increase the mutual conductance in a linear region and to obtain high speed in the MOS transistor having a crank-shaped channel, by depositing a film comprising a conductive material or a low resistivity material on at least one of the source diffused region and the drain diffused region. CONSTITUTION:The drain diffused region 2 and the source diffused region 3, both of which have the protruded branched portions, are formed on a semiconductor substrate 1, and the MOS transistor having the crank-shaped channel is constituted. Then, all the surface is covered by an oxide film 6, and contact holes 7 are perforated so as to correspond to the regions 2 and 3. An electrode layer 4d, wherein a low- resistance material comprising Al, polycrystal Si, is deposited on the region 2 on the contact hole, and the end of the electrode 4d is connected to a drain terminal D. By the same method, an electrode layer 4s is deposited on the region 3 and connected to a source terminal S. The oxide film 6 is also deposited on the region 2a which is branched from the region 2, and a hole 9 is perforated. A low resistance film 8 which is connected to the region 2a is provided, and the potential at the tip A of said film 8 is brought to the potential at the terminal D.
JP10536079A 1979-08-18 1979-08-18 Mos transistor Pending JPS5629370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10536079A JPS5629370A (en) 1979-08-18 1979-08-18 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10536079A JPS5629370A (en) 1979-08-18 1979-08-18 Mos transistor

Publications (1)

Publication Number Publication Date
JPS5629370A true JPS5629370A (en) 1981-03-24

Family

ID=14405550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10536079A Pending JPS5629370A (en) 1979-08-18 1979-08-18 Mos transistor

Country Status (1)

Country Link
JP (1) JPS5629370A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117166A (en) * 1982-12-23 1984-07-06 Nec Corp Metal oxide semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117166A (en) * 1982-12-23 1984-07-06 Nec Corp Metal oxide semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
JPS5676574A (en) Schottky injection electrode type semiconductor device
GB1457800A (en) Semiconductor devices
JPS5629370A (en) Mos transistor
JPS5643749A (en) Semiconductor device and its manufacture
JPS56164578A (en) Manufacture of mos type semiconductor device
KR870009475A (en) Semiconductor device manufacturing method
JPS57102067A (en) Manufacture of complementary type metal oxide semiconductor
JPS56125875A (en) Semiconductor integrated circuit device
JPS55120170A (en) Mos type semiconductor device
JPS5629344A (en) Semiconductor integrated circuit device and manufacture thereof
JPS55151365A (en) Insulated gate type transistor and semiconductor integrated circuit
JPS55108773A (en) Insulating gate type field effect transistor
JPS5775454A (en) Complementary type mos integrated circuit device
JPS54149479A (en) Semiconductor device
JPS57132352A (en) Complementary type metal oxide semiconductor integrated circuit device
JPS57207379A (en) Field-effect transistor
JPS566464A (en) Semiconductor device and manufacture thereof
JPS571261A (en) Schottky barrier type semiconductor device
JPS55143068A (en) Insulated gate semiconductor device
JPS55103772A (en) Semiconductor device
JPS5539412A (en) Insulating gate field effect transistor integrated circuit and its manufacture
JPS5642374A (en) Field effect transistor
DE3663427D1 (en) Method of making integrated circuits by the mos and cmos technique, and cmos structure
JPS55102262A (en) Semiconductor device
JPS54158179A (en) Semiconductor device