JPS5637675A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5637675A JPS5637675A JP11379879A JP11379879A JPS5637675A JP S5637675 A JPS5637675 A JP S5637675A JP 11379879 A JP11379879 A JP 11379879A JP 11379879 A JP11379879 A JP 11379879A JP S5637675 A JPS5637675 A JP S5637675A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- boron
- coated
- polycrystalline
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a high cut-off frequency in a PNP type transistor while easily facilitating its design by employing a diffusion source obtained by selectively adding boron to a nonaddition polycrystalline Si layer to form an emitter region when forming the transistor. CONSTITUTION:An SiO2 film 2 is coated on a P type Si substrate 1 becoming a collector, an opening is perforated thereat, an N type base region 3 is diffused, no- addition polycrystalline Si layer 4 is grown in vapor phase on the entire surface, and an Si3N4 layer 5 and an SiO2 layer 6 are coated thereon. Then, an opening 7 reaching the layer 4 is perforated at these layers, the layer 4 is partly exposed, with the layer 6 as a mask boron ions are implanted, and the layer 4 is partly altered into a boron-added polycrystalline Si layer 8. Thereafter, the layer 5 formed therearound is sidewisely etched with a hot phosphoric acid, and a constricted region 9 is formed, the layer 4 of fast etching speed exposed here is removed with alkaline solution, a vacity 10 is thus formed, and the layer 8 is independently formed. Subsequently, the layers 6 and 5 are removed, the layer 8 is coated with an SiO2 layer 11, is heat treated, and boron in the layer 8 is diffused in a P type emitter region 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11379879A JPS5637675A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11379879A JPS5637675A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5637675A true JPS5637675A (en) | 1981-04-11 |
Family
ID=14621339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11379879A Pending JPS5637675A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637675A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235461A (en) * | 1984-05-08 | 1985-11-22 | Nec Corp | Manufacture of semiconductor device |
| JPS60241687A (en) * | 1984-05-15 | 1985-11-30 | 西谷 光夫 | Method of connecting copper wire to connecting terminal and its connecting terminal |
-
1979
- 1979-09-05 JP JP11379879A patent/JPS5637675A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235461A (en) * | 1984-05-08 | 1985-11-22 | Nec Corp | Manufacture of semiconductor device |
| JPS60241687A (en) * | 1984-05-15 | 1985-11-30 | 西谷 光夫 | Method of connecting copper wire to connecting terminal and its connecting terminal |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Effective date: 20041104 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A977 | Report on retrieval |
Effective date: 20060906 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20070109 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070330 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070521 |
|
| A521 | Written amendment |
Effective date: 20070709 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070904 |