JPS5643552A - Moisture sensing semiconductor element and its preparation - Google Patents

Moisture sensing semiconductor element and its preparation

Info

Publication number
JPS5643552A
JPS5643552A JP11936779A JP11936779A JPS5643552A JP S5643552 A JPS5643552 A JP S5643552A JP 11936779 A JP11936779 A JP 11936779A JP 11936779 A JP11936779 A JP 11936779A JP S5643552 A JPS5643552 A JP S5643552A
Authority
JP
Japan
Prior art keywords
semiconductor element
moisture sensing
junction
preparation
regard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11936779A
Other languages
Japanese (ja)
Inventor
Takashi Yokoyama
Takae Ikeda
Yutaka Misawa
Koichiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11936779A priority Critical patent/JPS5643552A/en
Publication of JPS5643552A publication Critical patent/JPS5643552A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE: To obtain a moisture sensing semiconductor element which has a high sensitivity and also is excellent in mass-productivity, by covering the exposed part of p-n junction of a semiconductor element with moisture sensing material made of specific silicone rubber.
CONSTITUTION: A compound of 100pts.wt. diorganopolysiloxane (a) having a hydroxyl group at its end, shown in the expression II (R' is methyl, ethyl, phenol; n is 50W500), about 1W15pts.wt. organosilane (b) shown in the expression I (R is methyl, ethyl, vinyl), and about 0.01W1pts.wt. hardening catalyst (for instance, n-butyl-diethyltin acetate) (c) is applied on the exposed part of p-n junction of a semiconductor element, it is hardened, and a film of moisture sensing material made of a silicone rubber is formed. (In this regard, it is desirable to perform heat treatment in inert gas after hardening.) In this regard, as for the above-mentioned semiconductor element, that which has p-n junction is available, and a diode, a thyristor, a transistor, etc. are used.
COPYRIGHT: (C)1981,JPO&Japio
JP11936779A 1979-09-19 1979-09-19 Moisture sensing semiconductor element and its preparation Pending JPS5643552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11936779A JPS5643552A (en) 1979-09-19 1979-09-19 Moisture sensing semiconductor element and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11936779A JPS5643552A (en) 1979-09-19 1979-09-19 Moisture sensing semiconductor element and its preparation

Publications (1)

Publication Number Publication Date
JPS5643552A true JPS5643552A (en) 1981-04-22

Family

ID=14759736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11936779A Pending JPS5643552A (en) 1979-09-19 1979-09-19 Moisture sensing semiconductor element and its preparation

Country Status (1)

Country Link
JP (1) JPS5643552A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991017430A1 (en) * 1990-05-02 1991-11-14 The University Of Michigan Solid state ion sensor with silicone membrane

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991017430A1 (en) * 1990-05-02 1991-11-14 The University Of Michigan Solid state ion sensor with silicone membrane
US5102526A (en) * 1990-05-02 1992-04-07 The University Of Michigan Solid state ion sensor with silicon membrane

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