JPS5643725A - Etching device - Google Patents

Etching device

Info

Publication number
JPS5643725A
JPS5643725A JP11921879A JP11921879A JPS5643725A JP S5643725 A JPS5643725 A JP S5643725A JP 11921879 A JP11921879 A JP 11921879A JP 11921879 A JP11921879 A JP 11921879A JP S5643725 A JPS5643725 A JP S5643725A
Authority
JP
Japan
Prior art keywords
etched
etched material
etching
height
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11921879A
Other languages
Japanese (ja)
Inventor
Haruo Okano
Masahiro Shibagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11921879A priority Critical patent/JPS5643725A/en
Publication of JPS5643725A publication Critical patent/JPS5643725A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To maintain uniformity of a plasma etching by a method wherein a concaved section, having an upper end opening which is bigger than an etched material so as to be isolated from the etched material, is formed on an etched material placing electrode of an etching device. CONSTITUTION:On an etched material placing electrode 9, where an etched material 10 (a silicon substrate, etc.) is to be placed, a concaved section having a depth which is deeper than that of the etched material 10 with tapered off 11 circumference is provided and the height of contacting section 12 with the material to be etched is made lower than the height of the surface of the material to be etched. Hence, concentration of electrostatic at a specific point is eliminated and the stability of an etching form or uniformity of a plasma etching can be maintained.
JP11921879A 1979-09-19 1979-09-19 Etching device Pending JPS5643725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11921879A JPS5643725A (en) 1979-09-19 1979-09-19 Etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11921879A JPS5643725A (en) 1979-09-19 1979-09-19 Etching device

Publications (1)

Publication Number Publication Date
JPS5643725A true JPS5643725A (en) 1981-04-22

Family

ID=14755872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11921879A Pending JPS5643725A (en) 1979-09-19 1979-09-19 Etching device

Country Status (1)

Country Link
JP (1) JPS5643725A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181620A (en) * 1983-03-31 1984-10-16 Toshiba Corp Reactive-ion etching method
JPH02110925A (en) * 1989-09-27 1990-04-24 Hitachi Ltd Vacuum processing equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181620A (en) * 1983-03-31 1984-10-16 Toshiba Corp Reactive-ion etching method
JPH02110925A (en) * 1989-09-27 1990-04-24 Hitachi Ltd Vacuum processing equipment

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