JPS648626A - Dry etching of silicon using bromine gas - Google Patents
Dry etching of silicon using bromine gasInfo
- Publication number
- JPS648626A JPS648626A JP16228687A JP16228687A JPS648626A JP S648626 A JPS648626 A JP S648626A JP 16228687 A JP16228687 A JP 16228687A JP 16228687 A JP16228687 A JP 16228687A JP S648626 A JPS648626 A JP S648626A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- gas
- reactive ion
- ion etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To etch without hole bottom roughness and hole depth irregularity with good reproducibility by removing a natural oxide film on the surface of a silicon before the reactive ion etching of the silicon is conducted with bromine gas. CONSTITUTION:An SiO2 film 12 is formed on the whole surface of a silicon single crystalline substrate 1. A resist film 13 is formed thereon, exposed in a predetermined pattern, and developed to form a window 14. With the film 13 as a mask the film 12 is selectively removed by reactive ion etching with fluorine gas (CF4, CHF3, etc.) to form an opening 15. The film 13 is removed with a solvent or the like. When a silicon substrate 11 is handled while the resist film is removed or after the resist film is removed, a natural oxide film 16 is generated on the exposed surface of the substrate 11. The oxide film is removed by dry etching with fluorine gas or chlorine gas. Then, a hole 17 having no roughness at the bottom is obtained by reactive ion etching for silicon trench etching with bromine gas substantially vertically on the sidewall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16228687A JPS648626A (en) | 1987-07-01 | 1987-07-01 | Dry etching of silicon using bromine gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16228687A JPS648626A (en) | 1987-07-01 | 1987-07-01 | Dry etching of silicon using bromine gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS648626A true JPS648626A (en) | 1989-01-12 |
Family
ID=15751597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16228687A Pending JPS648626A (en) | 1987-07-01 | 1987-07-01 | Dry etching of silicon using bromine gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS648626A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02230727A (en) * | 1989-03-03 | 1990-09-13 | Fujitsu Ltd | Dry etching method |
| JPH03145725A (en) * | 1989-10-20 | 1991-06-20 | Internatl Business Mach Corp <Ibm> | Etching method |
| JPH03215938A (en) * | 1990-01-22 | 1991-09-20 | Sony Corp | Dry etching |
| JPH04326516A (en) * | 1991-04-25 | 1992-11-16 | Nec Corp | Etching-back method of polycrystalline si having uneven shape |
| JPH06163481A (en) * | 1992-11-18 | 1994-06-10 | Nippondenso Co Ltd | Dry etching method of semiconductor |
| JPH11111687A (en) * | 1997-10-01 | 1999-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Low gas pressure plasma etching method |
-
1987
- 1987-07-01 JP JP16228687A patent/JPS648626A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02230727A (en) * | 1989-03-03 | 1990-09-13 | Fujitsu Ltd | Dry etching method |
| JPH03145725A (en) * | 1989-10-20 | 1991-06-20 | Internatl Business Mach Corp <Ibm> | Etching method |
| JPH03215938A (en) * | 1990-01-22 | 1991-09-20 | Sony Corp | Dry etching |
| JPH04326516A (en) * | 1991-04-25 | 1992-11-16 | Nec Corp | Etching-back method of polycrystalline si having uneven shape |
| JPH06163481A (en) * | 1992-11-18 | 1994-06-10 | Nippondenso Co Ltd | Dry etching method of semiconductor |
| JPH11111687A (en) * | 1997-10-01 | 1999-04-23 | Nippon Telegr & Teleph Corp <Ntt> | Low gas pressure plasma etching method |
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