JPS5648531A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS5648531A
JPS5648531A JP12498979A JP12498979A JPS5648531A JP S5648531 A JPS5648531 A JP S5648531A JP 12498979 A JP12498979 A JP 12498979A JP 12498979 A JP12498979 A JP 12498979A JP S5648531 A JPS5648531 A JP S5648531A
Authority
JP
Japan
Prior art keywords
circuit
pressure
resistance
semiconductor
linearity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12498979A
Other languages
Japanese (ja)
Inventor
Shunji Shiromizu
Ryuzo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12498979A priority Critical patent/JPS5648531A/en
Publication of JPS5648531A publication Critical patent/JPS5648531A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2268—Arrangements for correcting or for compensating unwanted effects
    • G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To provide the linearity compensating function of the pressure sensitivity to the temperature compensating circuit, by using the semiconductor gauge resistance showing the resistance variation by the pressure for the resistance of temperature compensating circuit. CONSTITUTION:The bridge circuit 11 is formed by combining the semiconductor gate resistances R1 and R2 which respond to the pressure. For the temperature compensating circuit 12 provided between the voltage application terminal and the driviing power source of the circuit 11. the resistance R12 and R11 are provided between the base and the collector of the transistor Q plus between the base and the emitter each in order to obtain the semiconductor pressure detector. For this detector, the semiconductor gauge resistance responding to the pressure like the R1 and R2 in the circuit 11 is used at least part of the resistances R11 and R12 in the circuit 12. As a result, the linearity compensating function is given to the circuit 12, thus securing a simultaneous compensation for both the temperature and the linearity.
JP12498979A 1979-09-28 1979-09-28 Semiconductor pressure sensor Pending JPS5648531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12498979A JPS5648531A (en) 1979-09-28 1979-09-28 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12498979A JPS5648531A (en) 1979-09-28 1979-09-28 Semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS5648531A true JPS5648531A (en) 1981-05-01

Family

ID=14899150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12498979A Pending JPS5648531A (en) 1979-09-28 1979-09-28 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS5648531A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841309A (en) * 1981-08-10 1983-03-10 ザ・フオツクスボロ・コンパニ− Pressure feeding quantity device
JPS5896543A (en) * 1981-12-04 1983-06-08 三菱レイヨン株式会社 Fiber reinforced thermoplastic resin composite material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841309A (en) * 1981-08-10 1983-03-10 ザ・フオツクスボロ・コンパニ− Pressure feeding quantity device
JPS5896543A (en) * 1981-12-04 1983-06-08 三菱レイヨン株式会社 Fiber reinforced thermoplastic resin composite material

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