JPS5651822A - Vapor-phase growth for compound semiconductor epitaxial film - Google Patents

Vapor-phase growth for compound semiconductor epitaxial film

Info

Publication number
JPS5651822A
JPS5651822A JP12869679A JP12869679A JPS5651822A JP S5651822 A JPS5651822 A JP S5651822A JP 12869679 A JP12869679 A JP 12869679A JP 12869679 A JP12869679 A JP 12869679A JP S5651822 A JPS5651822 A JP S5651822A
Authority
JP
Japan
Prior art keywords
compound
organic
carrier density
epitaxial film
semiconductor epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12869679A
Other languages
Japanese (ja)
Inventor
Katsunobu Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP12869679A priority Critical patent/JPS5651822A/en
Publication of JPS5651822A publication Critical patent/JPS5651822A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material

Abstract

PURPOSE:To permit the carrier density to be accurately controlled by using an organic Cd compound having volatility as a P type dopant. CONSTITUTION:To provide a compound semiconductor epitaxial film of a III b group element and a V b group element on a monocrystalline substrate surface by vapor growth, an organic Cd compound having volatility is used as a P type dopant. As the organic Cd compound, a dialkyl compound R2Cd (R: alkyl group) is suitable. Said method permits a P type layer of a low carrier density to be reproducibly obtained even if a comparatively large quantity of R2Cd is supplied. This is because Cd has a small segregation coefficient. Moreover, because Cd has a small diffusion constant, the carrier density steeply varies, and therefore the P-N junction width and the like can be made extremely smaller.
JP12869679A 1979-10-05 1979-10-05 Vapor-phase growth for compound semiconductor epitaxial film Pending JPS5651822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12869679A JPS5651822A (en) 1979-10-05 1979-10-05 Vapor-phase growth for compound semiconductor epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12869679A JPS5651822A (en) 1979-10-05 1979-10-05 Vapor-phase growth for compound semiconductor epitaxial film

Publications (1)

Publication Number Publication Date
JPS5651822A true JPS5651822A (en) 1981-05-09

Family

ID=14991151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12869679A Pending JPS5651822A (en) 1979-10-05 1979-10-05 Vapor-phase growth for compound semiconductor epitaxial film

Country Status (1)

Country Link
JP (1) JPS5651822A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0751621A (en) * 1993-08-12 1995-02-28 Kansei Kogyo Kk Method for regenerating inner surface of pipe by electrostatic attraction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0751621A (en) * 1993-08-12 1995-02-28 Kansei Kogyo Kk Method for regenerating inner surface of pipe by electrostatic attraction

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