JPS51117882A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method

Info

Publication number
JPS51117882A
JPS51117882A JP4311575A JP4311575A JPS51117882A JP S51117882 A JPS51117882 A JP S51117882A JP 4311575 A JP4311575 A JP 4311575A JP 4311575 A JP4311575 A JP 4311575A JP S51117882 A JPS51117882 A JP S51117882A
Authority
JP
Japan
Prior art keywords
semiconductor device
device manufacturing
substrate
polycrystal
structuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4311575A
Other languages
Japanese (ja)
Inventor
Osamu Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4311575A priority Critical patent/JPS51117882A/en
Publication of JPS51117882A publication Critical patent/JPS51117882A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: Polycrystal growth nuclear substance is buried in the same surface as that of the substrate of sinking the surface of semiconductive substrates. The degree of semiconductor device integration can be increased by then growing epitaxial and structuring an epitaxial layer separated in the polycrystal region on the substrate.
COPYRIGHT: (C)1976,JPO&Japio
JP4311575A 1975-04-09 1975-04-09 Semiconductor device manufacturing method Pending JPS51117882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4311575A JPS51117882A (en) 1975-04-09 1975-04-09 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4311575A JPS51117882A (en) 1975-04-09 1975-04-09 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS51117882A true JPS51117882A (en) 1976-10-16

Family

ID=12654822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4311575A Pending JPS51117882A (en) 1975-04-09 1975-04-09 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS51117882A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123222A (en) * 1982-12-28 1984-07-17 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029159A (en) * 1973-07-17 1975-03-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029159A (en) * 1973-07-17 1975-03-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123222A (en) * 1982-12-28 1984-07-17 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method

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