JPS5657038A - Photomask for integrated circuit - Google Patents

Photomask for integrated circuit

Info

Publication number
JPS5657038A
JPS5657038A JP13461079A JP13461079A JPS5657038A JP S5657038 A JPS5657038 A JP S5657038A JP 13461079 A JP13461079 A JP 13461079A JP 13461079 A JP13461079 A JP 13461079A JP S5657038 A JPS5657038 A JP S5657038A
Authority
JP
Japan
Prior art keywords
pattern
photomask
integrated circuit
circuit
chip forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13461079A
Other languages
Japanese (ja)
Other versions
JPS6148708B2 (en
Inventor
Masaru Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13461079A priority Critical patent/JPS5657038A/en
Publication of JPS5657038A publication Critical patent/JPS5657038A/en
Publication of JPS6148708B2 publication Critical patent/JPS6148708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable an integrated circuit to be manufactured correctly and efficiently in an ordinary etching process by using at least one of a plurality of arranged mask patterns as an etching monitor chip forming pattern composed of a white pattern and a black pattern. CONSTITUTION:A plurality of mask patterns 2 for an integrated circuit are arranged longitudinally and laterally on glass surface 1 of a photomask, and one of patterns 2 is used as etching monitor chip forming mask pattern 3. When pattern 3 is magnified, in the square region corresponding to the area of one chip of the circuit rectangular white pattern 4 and rectangular black pattern 5 each having the length of one side of the region as the longitudinal size are combined in the form of a lattice. When a film part with two kinds of thickness is etched, white pattern 4' is partially superposed on the position of black pattern 5' of the etching monitor chip forming pattern of other photomask having the same combination for the circuit.
JP13461079A 1979-10-15 1979-10-15 Photomask for integrated circuit Granted JPS5657038A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13461079A JPS5657038A (en) 1979-10-15 1979-10-15 Photomask for integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13461079A JPS5657038A (en) 1979-10-15 1979-10-15 Photomask for integrated circuit

Publications (2)

Publication Number Publication Date
JPS5657038A true JPS5657038A (en) 1981-05-19
JPS6148708B2 JPS6148708B2 (en) 1986-10-25

Family

ID=15132414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13461079A Granted JPS5657038A (en) 1979-10-15 1979-10-15 Photomask for integrated circuit

Country Status (1)

Country Link
JP (1) JPS5657038A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02307266A (en) * 1989-05-23 1990-12-20 Seiko Epson Corp Semiconductor integrated circuit device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119614U (en) * 1988-02-02 1989-08-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02307266A (en) * 1989-05-23 1990-12-20 Seiko Epson Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6148708B2 (en) 1986-10-25

Similar Documents

Publication Publication Date Title
JPS5713180A (en) Etching method
JPS55113343A (en) Manufacture of semiconductor device
JPS55108790A (en) Semiconductor luminous device
JPS54101274A (en) Manufacture for semiconductor device
JPS6417463A (en) Image reader
JPS5656632A (en) Manufacture of semiconductor element
JPS56140626A (en) Manufacture of semiconductor device
JPS54105987A (en) Manufacture of semiconductor device
JPS5658234A (en) Manufacture of semiconductor integrated circuit
JPS55129349A (en) Photomask
JPS6421450A (en) Production of mask
JPS57166034A (en) Positioning method
JPS558037A (en) Photo mask
JPS534476A (en) Mask alignment method to semiconductor substrate
JPS5421275A (en) Photo mask for semiconductor wafer manufacture
JPS6455826A (en) Manufacture of semiconductor device
JPS5587149A (en) Photomask for preparation of semiconductor wafer
JPS52117557A (en) Soft x-ray exposure mask and its manufacturing method
JPS5444872A (en) Manufacture of semiconductor device
JPS57180136A (en) Pattern formation
JPS5687322A (en) Manufacture of semiconductor device
JPS57198460A (en) Formation of mask for matrix waveguide
JPS57194530A (en) Positioning of photomask substrate
JPS54983A (en) Photo mask for semiconductor manufacture
JPS52152171A (en) Wafer alignment method