JPS5658253A - Capacitor for integrated circuit - Google Patents
Capacitor for integrated circuitInfo
- Publication number
- JPS5658253A JPS5658253A JP13280479A JP13280479A JPS5658253A JP S5658253 A JPS5658253 A JP S5658253A JP 13280479 A JP13280479 A JP 13280479A JP 13280479 A JP13280479 A JP 13280479A JP S5658253 A JPS5658253 A JP S5658253A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic capacity
- area
- substrate
- insulator film
- undersurface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 5
- 239000012212 insulator Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain the capacitor large in an electrostatic capacity with a smaller area by expanding the area of opposed electrodes with a three-dimensional construction of the electrostatic capacity section formed on a semiconductor substrate. CONSTITUTION:When the first polycrystalline Si body 4' composing one of electrostatic capacity sections is formed on the semiconductor substrate 1, a dielectric insulator film 3 is applied over the entire substrate 1 and a contact region R of a small area is opened in the center thereof to have the Si body 4' contacting the substrate 1. Then, an Si body 4' having a pillar-shaped part in the center of the undersurface thereof while a top of a large area parallel to the substrate 1 is formed with the undersurface of the pillar-shaped part contacting the region R and the surface of the Si body 4' is covered with a dielectric insulator film 3' being integrated with the film 3. Thereafter, the circumference of the Si body 4' is entirely wrapped with the second Si body 5 serving as an electrostatic capacity section by way of the films 3 and 3' and the assembly is enclosed by a thick insulator film 3. This allows the Si body 4' to serve as an electrostatic capacity section both in the surface and back thereof, thereby enhancing the capacity in proportion to increment in the area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13280479A JPS5658253A (en) | 1979-10-17 | 1979-10-17 | Capacitor for integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13280479A JPS5658253A (en) | 1979-10-17 | 1979-10-17 | Capacitor for integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5658253A true JPS5658253A (en) | 1981-05-21 |
Family
ID=15089956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13280479A Pending JPS5658253A (en) | 1979-10-17 | 1979-10-17 | Capacitor for integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5658253A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60211866A (en) * | 1984-04-05 | 1985-10-24 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| US5530274A (en) * | 1994-03-25 | 1996-06-25 | Mitsubishi Denki Kabushiki Kaisha | Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom, microcomputer, and IC card |
| US5629228A (en) * | 1992-07-23 | 1997-05-13 | Texas Instruments Incorporated | Method of making stacked DRAM capacitor structure by using a conformal conductor |
| US6046468A (en) * | 1987-11-25 | 2000-04-04 | Fujitsu Limited | Dynamic random access memory device and method for producing the same |
| US6617205B1 (en) | 1995-11-20 | 2003-09-09 | Hitachi, Ltd. | Semiconductor storage device and process for manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52104088A (en) * | 1976-02-27 | 1977-09-01 | Hitachi Ltd | Mis capacitor |
-
1979
- 1979-10-17 JP JP13280479A patent/JPS5658253A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52104088A (en) * | 1976-02-27 | 1977-09-01 | Hitachi Ltd | Mis capacitor |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60211866A (en) * | 1984-04-05 | 1985-10-24 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| US6046468A (en) * | 1987-11-25 | 2000-04-04 | Fujitsu Limited | Dynamic random access memory device and method for producing the same |
| US6114721A (en) * | 1987-11-25 | 2000-09-05 | Fujitsu Limited | Dynamic random access memory device and method for producing the same |
| US5629228A (en) * | 1992-07-23 | 1997-05-13 | Texas Instruments Incorporated | Method of making stacked DRAM capacitor structure by using a conformal conductor |
| US5952688A (en) * | 1992-07-23 | 1999-09-14 | Texas Instruments Incorporated | Stacked DRAM structure |
| US5530274A (en) * | 1994-03-25 | 1996-06-25 | Mitsubishi Denki Kabushiki Kaisha | Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom, microcomputer, and IC card |
| US6617205B1 (en) | 1995-11-20 | 2003-09-09 | Hitachi, Ltd. | Semiconductor storage device and process for manufacturing the same |
| US6791134B2 (en) | 1995-11-20 | 2004-09-14 | Hitachi, Ltd. | Semiconductor memory device and manufacturing method thereof |
| US6798005B2 (en) | 1995-11-20 | 2004-09-28 | Hitachi, Ltd. | Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits |
| US7196368B2 (en) | 1995-11-20 | 2007-03-27 | Renesas Technology Corp. | Semiconductor memory arrangements with crown shaped capacitor arrangements trenched in interlayer dielectric film |
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