JPS565972A - Film forming method - Google Patents

Film forming method

Info

Publication number
JPS565972A
JPS565972A JP8209179A JP8209179A JPS565972A JP S565972 A JPS565972 A JP S565972A JP 8209179 A JP8209179 A JP 8209179A JP 8209179 A JP8209179 A JP 8209179A JP S565972 A JPS565972 A JP S565972A
Authority
JP
Japan
Prior art keywords
supporter
electrodes
film
wiry
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8209179A
Other languages
Japanese (ja)
Other versions
JPS6257710B2 (en
Inventor
Hidekazu Inoue
Isamu Shimizu
Kyosuke Ogawa
Nobuo Kitajima
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP8209179A priority Critical patent/JPS565972A/en
Publication of JPS565972A publication Critical patent/JPS565972A/en
Publication of JPS6257710B2 publication Critical patent/JPS6257710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form a uniform film over large area by placing a movable supporter and wiry discharge electrodes in an evacuated deposition chamber in parallel with each other, introducing a reactive gas, and inducing discharge. CONSTITUTION:A film having uniformity in its physical characteristics and thickness is formed over large area with high reproducibility. For example, deposition chamber 103 is internally provided with beltlike supporter 107 which is automatically coiled with roller 108, earth side flat plate electrode 109, gas supplying means 110, many wiry discharge electrodes 111 regularly arranged between means 110 and supporter 107 in parapllel with supporter 107, and heater 112. Chamber 103 is evacuated to a predetermined vacuum degree from vacuum hole 106, and a reactive gas is supplied into chamber 103 from many holes of means 110. Glow discharge is induced between the electrodes to convert the internal gas into plasma, thereby forming a film on supporter 107. Roller 108 successively coils supporter 107 so that the film forming surface of supporter 107 is moved relatively to wiry electrodes 111.
JP8209179A 1979-06-27 1979-06-27 Film forming method Granted JPS565972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8209179A JPS565972A (en) 1979-06-27 1979-06-27 Film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8209179A JPS565972A (en) 1979-06-27 1979-06-27 Film forming method

Publications (2)

Publication Number Publication Date
JPS565972A true JPS565972A (en) 1981-01-22
JPS6257710B2 JPS6257710B2 (en) 1987-12-02

Family

ID=13764759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8209179A Granted JPS565972A (en) 1979-06-27 1979-06-27 Film forming method

Country Status (1)

Country Link
JP (1) JPS565972A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935674A (en) * 1982-08-24 1984-02-27 Sumitomo Electric Ind Ltd Vapor deposition device
JPS6428810A (en) * 1987-07-23 1989-01-31 Mitsui Toatsu Chemicals Device for forming film
JPH04107826U (en) * 1991-02-28 1992-09-17 三洋電機株式会社 Photovoltaic device manufacturing equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5935674A (en) * 1982-08-24 1984-02-27 Sumitomo Electric Ind Ltd Vapor deposition device
JPS6428810A (en) * 1987-07-23 1989-01-31 Mitsui Toatsu Chemicals Device for forming film
JPH04107826U (en) * 1991-02-28 1992-09-17 三洋電機株式会社 Photovoltaic device manufacturing equipment

Also Published As

Publication number Publication date
JPS6257710B2 (en) 1987-12-02

Similar Documents

Publication Publication Date Title
US4342631A (en) Gasless ion plating process and apparatus
TW271484B (en) Apparatus for obtaining dose uniformity in plasma doping (plad) ion implantation process
EP0942473A3 (en) Process for forming a microcrystalline silicon series thin film and apparatus suitable for practicing said process
JPS5730325A (en) Manufacture of amorphous silicon thin film
JPS5591968A (en) Film forming method by glow discharge
JPS565972A (en) Film forming method
JPS565974A (en) Film forming method
JPS565971A (en) Film forming method
JPS565975A (en) Film forming method
ES8707630A1 (en) IMPROVEMENTS INTRODUCED IN AN APPARATUS ADAPTED TO DEPOSIT A SEMICONDUCTIVE MATERIAL IN A SUBSTRATE
JPS54155046A (en) Method of manufacturing electrophotographic image forming material
JPS565973A (en) Film forming method
JPS5745339A (en) Production of deposited film
JPS5667925A (en) Plasma etching method
JPH09125240A (en) Sputtering equipment
JPS56169116A (en) Manufacture of amorphous silicon film
JPS5671930A (en) Film formation
US3344055A (en) Apparatus for polymerizing and forming thin continuous films using a glow discharge
JPS56130465A (en) Film forming method
JPS6423537A (en) Plasma processing device
JPS56163262A (en) Method and apparatus for forming oxidation and weather resistant film after surface treatment
JPS57113214A (en) Manufacture of amorphous semiconductor film
JPS5662965A (en) Sputtering apparatus
JPS5773175A (en) Chemical vapor deposition device
JPS55141565A (en) Sputtering apparatus