JPS5671930A - Film formation - Google Patents

Film formation

Info

Publication number
JPS5671930A
JPS5671930A JP14972679A JP14972679A JPS5671930A JP S5671930 A JPS5671930 A JP S5671930A JP 14972679 A JP14972679 A JP 14972679A JP 14972679 A JP14972679 A JP 14972679A JP S5671930 A JPS5671930 A JP S5671930A
Authority
JP
Japan
Prior art keywords
electrodes
substance
gas
pair
pipes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14972679A
Other languages
Japanese (ja)
Other versions
JPS6239532B2 (en
Inventor
Nobuo Kitajima
Kyosuke Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14972679A priority Critical patent/JPS5671930A/en
Publication of JPS5671930A publication Critical patent/JPS5671930A/en
Publication of JPS6239532B2 publication Critical patent/JPS6239532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a uniformly thick and characteristic film by moving a filmy support substance forming an amorphous Si film in a decompression and reaction chamber wherein a plurality of electrodes composing two pieces as a pair are vertically provided on the substance and predetermined gas is flowed to the electrods and predetermined gas is flowed to the electrodes and Si films are accumulated by glow discharge. CONSTITUTION:A supply roller 102 and a take-up roller 105 are provided in a decompression and reaction chamber 101 and a filmy support substance 103 with predetermined length is moved between the rollers and the substance 103 is supported by a guide support plate 104 providing a heater 106 at the reverse side of the plate 104. And a plurality of plated electrodes 107 with a slight gap each other are arranged under vertical condition and at certain intervals on the substance 103. Two electrodes are made as a pair and connections are applied one after the other. And a voltage is applied to the electrodes from a power source 109 provided at the outside of the chamber 101. Gas guide pipes 108 are also provided to spray gas to each pair of the electrodes, through the pipes 108 and carrier gas such as SiH4, impurities, Ar or the like is sent to the pipes from bombs 110-1-110-3.
JP14972679A 1979-11-19 1979-11-19 Film formation Granted JPS5671930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14972679A JPS5671930A (en) 1979-11-19 1979-11-19 Film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14972679A JPS5671930A (en) 1979-11-19 1979-11-19 Film formation

Publications (2)

Publication Number Publication Date
JPS5671930A true JPS5671930A (en) 1981-06-15
JPS6239532B2 JPS6239532B2 (en) 1987-08-24

Family

ID=15481461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14972679A Granted JPS5671930A (en) 1979-11-19 1979-11-19 Film formation

Country Status (1)

Country Link
JP (1) JPS5671930A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150874A (en) * 1980-04-23 1981-11-21 Teijin Ltd Method of continuously manufacturing amorphous silicon solar battery
FR2550007A1 (en) * 1983-07-29 1985-02-01 Sanyo Electric Co Method for producing a semiconducting film and photovoltaic device obtained by the method
JPS6059728A (en) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd Preparation of semiconductor film
JPS6059729A (en) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd Preparation of semiconductor film
JPS61116825A (en) * 1984-11-12 1986-06-04 Kanegafuchi Chem Ind Co Ltd Formation of multiple electrode thin film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0382403A (en) * 1989-08-28 1991-04-08 Matsushita Electric Works Ltd Elevating/sinking table

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150874A (en) * 1980-04-23 1981-11-21 Teijin Ltd Method of continuously manufacturing amorphous silicon solar battery
FR2550007A1 (en) * 1983-07-29 1985-02-01 Sanyo Electric Co Method for producing a semiconducting film and photovoltaic device obtained by the method
JPS6059728A (en) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd Preparation of semiconductor film
JPS6059729A (en) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd Preparation of semiconductor film
JPS61116825A (en) * 1984-11-12 1986-06-04 Kanegafuchi Chem Ind Co Ltd Formation of multiple electrode thin film

Also Published As

Publication number Publication date
JPS6239532B2 (en) 1987-08-24

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