JPS5660061A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5660061A
JPS5660061A JP13577579A JP13577579A JPS5660061A JP S5660061 A JPS5660061 A JP S5660061A JP 13577579 A JP13577579 A JP 13577579A JP 13577579 A JP13577579 A JP 13577579A JP S5660061 A JPS5660061 A JP S5660061A
Authority
JP
Japan
Prior art keywords
channel
field effect
monocrystalline substrate
effect transistor
silicon monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13577579A
Other languages
Japanese (ja)
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13577579A priority Critical patent/JPS5660061A/en
Publication of JPS5660061A publication Critical patent/JPS5660061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To minimize the change in the transistor characteristics due to piezo effect by coinciding the channel direction of a P type channel field effect transistor with <100> direction. CONSTITUTION:The channel of the P type channel field effect transistor formed on the main surface of a silicon monocrystalline substrate 1 is directed in <100> direction. Source 3, gate electrode 5 and drain 4 are so disposed, for example, in a <100> direction being 45 deg. with respect to the orientation flat part 2 in a 100 direction of the silicon monocrystalline substrate 1 having (100) plane so that the channel direction coincides with the <100> direction.
JP13577579A 1979-10-19 1979-10-19 Semiconductor device Pending JPS5660061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13577579A JPS5660061A (en) 1979-10-19 1979-10-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13577579A JPS5660061A (en) 1979-10-19 1979-10-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5660061A true JPS5660061A (en) 1981-05-23

Family

ID=15159558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13577579A Pending JPS5660061A (en) 1979-10-19 1979-10-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5660061A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253268A (en) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd semiconductor equipment
US4662059A (en) * 1985-09-19 1987-05-05 Rca Corporation Method of making stabilized silicon-on-insulator field-effect transistors having 100 oriented side and top surfaces
FR2815772A1 (en) * 2000-10-25 2002-04-26 Mitsubishi Electric Corp SEMICONDUCTOR SLICE, MANUFACTURING PROCESS AND MANUFACTURING APPARATUS
US6897526B1 (en) * 1998-02-12 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for producing the same
US7291542B2 (en) 2002-09-30 2007-11-06 Renesas Technology Corp. Semiconductor wafer and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129987A (en) * 1977-04-19 1978-11-13 Japan Radio Co Ltd Semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53129987A (en) * 1977-04-19 1978-11-13 Japan Radio Co Ltd Semiconductor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253268A (en) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd semiconductor equipment
US4662059A (en) * 1985-09-19 1987-05-05 Rca Corporation Method of making stabilized silicon-on-insulator field-effect transistors having 100 oriented side and top surfaces
US6897526B1 (en) * 1998-02-12 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for producing the same
US7687855B2 (en) 1998-02-12 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having impurity region
FR2815772A1 (en) * 2000-10-25 2002-04-26 Mitsubishi Electric Corp SEMICONDUCTOR SLICE, MANUFACTURING PROCESS AND MANUFACTURING APPARATUS
US6864534B2 (en) 2000-10-25 2005-03-08 Renesas Technology Corp. Semiconductor wafer
US7291542B2 (en) 2002-09-30 2007-11-06 Renesas Technology Corp. Semiconductor wafer and manufacturing method thereof

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