JPS5662376A - Schottky diode - Google Patents

Schottky diode

Info

Publication number
JPS5662376A
JPS5662376A JP13763979A JP13763979A JPS5662376A JP S5662376 A JPS5662376 A JP S5662376A JP 13763979 A JP13763979 A JP 13763979A JP 13763979 A JP13763979 A JP 13763979A JP S5662376 A JPS5662376 A JP S5662376A
Authority
JP
Japan
Prior art keywords
film
barrier
phib
decay
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13763979A
Other languages
Japanese (ja)
Inventor
Akihiro Sato
Heiji Moroshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13763979A priority Critical patent/JPS5662376A/en
Publication of JPS5662376A publication Critical patent/JPS5662376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To avoid a decay of counter flow current and to improve a reliability of a diode by a method wherein an electrode layer made of metal having a good contact junction characteristic against Ti is formed on W film through Ti film covering surface and circumferential edges. CONSTITUTION:A part of Ti film 6 is contacted at the P type Si base board 1 at a circumference of W film 3 to form a barrier. Then, a work function phiB of Ti/P-Si is higher phiB=0.65 of W/P-Si. When an area of W at its central part is sufficiently high, it is acted as Schottky barrier diode, Ti at the circumference forms a barrier having a high barrier potential, a junction with SiO2 is improved, so that no decay of counter flow current or poor short circuit may be found.
JP13763979A 1979-10-26 1979-10-26 Schottky diode Pending JPS5662376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13763979A JPS5662376A (en) 1979-10-26 1979-10-26 Schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13763979A JPS5662376A (en) 1979-10-26 1979-10-26 Schottky diode

Publications (1)

Publication Number Publication Date
JPS5662376A true JPS5662376A (en) 1981-05-28

Family

ID=15203336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13763979A Pending JPS5662376A (en) 1979-10-26 1979-10-26 Schottky diode

Country Status (1)

Country Link
JP (1) JPS5662376A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104163A (en) * 1982-12-07 1984-06-15 Internatl Rectifier Corp Japan Ltd Planar type semiconductor device
JPS62193280A (en) * 1986-02-20 1987-08-25 Fuji Electric Co Ltd Schottky barrier diode
JPH01246867A (en) * 1988-03-28 1989-10-02 Sumitomo Electric Ind Ltd schottky junction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104163A (en) * 1982-12-07 1984-06-15 Internatl Rectifier Corp Japan Ltd Planar type semiconductor device
JPS62193280A (en) * 1986-02-20 1987-08-25 Fuji Electric Co Ltd Schottky barrier diode
JPH01246867A (en) * 1988-03-28 1989-10-02 Sumitomo Electric Ind Ltd schottky junction

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