JPS5664480A - Manufacture of semiconductor detector for radioactive ray - Google Patents
Manufacture of semiconductor detector for radioactive rayInfo
- Publication number
- JPS5664480A JPS5664480A JP13949079A JP13949079A JPS5664480A JP S5664480 A JPS5664480 A JP S5664480A JP 13949079 A JP13949079 A JP 13949079A JP 13949079 A JP13949079 A JP 13949079A JP S5664480 A JPS5664480 A JP S5664480A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- substrate
- alloy
- evaporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
- H10F30/2955—Shallow PN junction radiation detectors
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13949079A JPS5664480A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor detector for radioactive ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13949079A JPS5664480A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor detector for radioactive ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5664480A true JPS5664480A (en) | 1981-06-01 |
Family
ID=15246467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13949079A Pending JPS5664480A (en) | 1979-10-29 | 1979-10-29 | Manufacture of semiconductor detector for radioactive ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5664480A (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548370B1 (en) | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
| US6753212B2 (en) | 1999-08-13 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US6878574B2 (en) | 2002-01-17 | 2005-04-12 | Sony Corporation | Alloying method for a image display device using laser irradiation |
| US7078321B2 (en) * | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7456371B2 (en) | 1999-08-18 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus and laser annealing method |
-
1979
- 1979-10-29 JP JP13949079A patent/JPS5664480A/ja active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7179698B2 (en) | 1999-08-13 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US6753212B2 (en) | 1999-08-13 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US7473622B2 (en) | 1999-08-13 | 2009-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and manufacturing method of a semiconductor device |
| US6974731B2 (en) | 1999-08-13 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US7456371B2 (en) | 1999-08-18 | 2008-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Laser apparatus and laser annealing method |
| US7338913B2 (en) | 1999-08-18 | 2008-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| US6548370B1 (en) | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
| US7078321B2 (en) * | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US7049227B2 (en) | 2002-01-17 | 2006-05-23 | Sony Corporation | Method for alloying a wiring portion for a image display device |
| US7319052B2 (en) | 2002-01-17 | 2008-01-15 | Sony Corporation | Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method |
| US7011990B2 (en) | 2002-01-17 | 2006-03-14 | Sony Corporation | Alloying method using laser irradiation for a light emitting device |
| US7008827B2 (en) | 2002-01-17 | 2006-03-07 | Sony Corporation | Alloy method using laser irradiation |
| US6878574B2 (en) | 2002-01-17 | 2005-04-12 | Sony Corporation | Alloying method for a image display device using laser irradiation |
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