JPS5666079A - Photo semiconductor device - Google Patents

Photo semiconductor device

Info

Publication number
JPS5666079A
JPS5666079A JP14180879A JP14180879A JPS5666079A JP S5666079 A JPS5666079 A JP S5666079A JP 14180879 A JP14180879 A JP 14180879A JP 14180879 A JP14180879 A JP 14180879A JP S5666079 A JPS5666079 A JP S5666079A
Authority
JP
Japan
Prior art keywords
layer
auzn
electrode
covered
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14180879A
Other languages
Japanese (ja)
Other versions
JPS6054794B2 (en
Inventor
Toshiaki Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54141808A priority Critical patent/JPS6054794B2/en
Publication of JPS5666079A publication Critical patent/JPS5666079A/en
Publication of JPS6054794B2 publication Critical patent/JPS6054794B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce the contact resistance when forming an electrode for the LED of the subject semiconductor device by a method wherein a contact window is opened penetrating through the insulating layer, a Cr layer, and an Au layer, provided on a crystalline layer, and an AuZn layer is formed on said window and then a heat sink is fixed on the AuZn layer. CONSTITUTION:An LED is composed on a clad layer 3 by laminating an active layer 2 and a light lead-out layer 1, and an annular electrode 8 is covered on the periphery of the light lead-out layer 1. Then a heat sink 9, which performs an additional function as an electrode through a medium of an AuZn layer 4, is provided on the opposed clad layer 3 in the following manner. The layer 3 is covered by an SiO2 film 5, the surface of which is covered by a Cr layer 6 and an Au layer 7, while a window is opened at the center and the clad layer 3 is exposed. Then an AuZn layer 4, which is contacting the layer 3 and covering the layer 7, is coated and a heat sink 9 is fixed here. As the whole area of the electrode contact region is composed by the AuZn, the resistance is sufficiently reduced an the adhesive force is increased.
JP54141808A 1979-11-01 1979-11-01 Optical semiconductor device Expired JPS6054794B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54141808A JPS6054794B2 (en) 1979-11-01 1979-11-01 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54141808A JPS6054794B2 (en) 1979-11-01 1979-11-01 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS5666079A true JPS5666079A (en) 1981-06-04
JPS6054794B2 JPS6054794B2 (en) 1985-12-02

Family

ID=15300600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54141808A Expired JPS6054794B2 (en) 1979-11-01 1979-11-01 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS6054794B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147188A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Semiconductor laser device
GB2371404A (en) * 2001-01-23 2002-07-24 Univ Glasgow An optical device with a heat sink
CN102412361A (en) * 2010-09-21 2012-04-11 佳胜科技股份有限公司 Laminated heat dissipation substrate and electronic assembly structure using the laminated heat dissipation substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147188A (en) * 1982-02-26 1983-09-01 Fujitsu Ltd Semiconductor laser device
GB2371404A (en) * 2001-01-23 2002-07-24 Univ Glasgow An optical device with a heat sink
GB2371404B (en) * 2001-01-23 2003-07-09 Univ Glasgow Improvements in or relating to optical devices
CN102412361A (en) * 2010-09-21 2012-04-11 佳胜科技股份有限公司 Laminated heat dissipation substrate and electronic assembly structure using the laminated heat dissipation substrate

Also Published As

Publication number Publication date
JPS6054794B2 (en) 1985-12-02

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