JPS5745966A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5745966A
JPS5745966A JP55121565A JP12156580A JPS5745966A JP S5745966 A JPS5745966 A JP S5745966A JP 55121565 A JP55121565 A JP 55121565A JP 12156580 A JP12156580 A JP 12156580A JP S5745966 A JPS5745966 A JP S5745966A
Authority
JP
Japan
Prior art keywords
layer
electrode
window
polysilicon
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55121565A
Other languages
Japanese (ja)
Other versions
JPH0666315B2 (en
Inventor
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55121565A priority Critical patent/JPH0666315B2/en
Publication of JPS5745966A publication Critical patent/JPS5745966A/en
Publication of JPH0666315B2 publication Critical patent/JPH0666315B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To stereoscopically form a resistance layer on an electrode forming region without damaging a diffused layer by emitting a laser to a polysilicon grown at a low temperature on the electrode window of a semiconductor substrate finished with diffusing step to single-crystallizing it. CONSTITUTION:A p type layer 3 and an n<+> type layer 2 are formed on an n type epitaxial layer 4 isolated with a p<+> type layer, A window is selectively opened at an SiO2 film 5, and polysilicon 6 and an SiO2 film 7 are laminated. A window is selectively opened at the SiO2 film 7, a doped polysilicon 9 is superposed thereon, and a laser beam is emitted to the electrode arranging region 9' to convert the polysilicon into a single-crystalline Si. It is then photographically etched to form a resistance layer 10 on the electrode window, is then etched with fluoric acid to selectively retain an annular SiO27'. Then, aluminum electrode and wire 11 are formed, and a PSG12 is covered. With this configuration desired conductive type and desired resistance value resistance can be stereoscopically formed on the desired electrode, but it does not occupy the surface area of the substrate nor disturb the function of the difused layer thus completely formed.
JP55121565A 1980-09-02 1980-09-02 Semiconductor device and manufacturing method thereof Expired - Lifetime JPH0666315B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55121565A JPH0666315B2 (en) 1980-09-02 1980-09-02 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55121565A JPH0666315B2 (en) 1980-09-02 1980-09-02 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS5745966A true JPS5745966A (en) 1982-03-16
JPH0666315B2 JPH0666315B2 (en) 1994-08-24

Family

ID=14814372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55121565A Expired - Lifetime JPH0666315B2 (en) 1980-09-02 1980-09-02 Semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0666315B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04330120A (en) * 1991-03-26 1992-11-18 Kunio Watanabe Sheathing, boundary concrete block, and constructing method therefore

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04330120A (en) * 1991-03-26 1992-11-18 Kunio Watanabe Sheathing, boundary concrete block, and constructing method therefore

Also Published As

Publication number Publication date
JPH0666315B2 (en) 1994-08-24

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