JPS567431A - Method and apparatus for controlling low pressure of vacuum apparatus - Google Patents

Method and apparatus for controlling low pressure of vacuum apparatus

Info

Publication number
JPS567431A
JPS567431A JP8205279A JP8205279A JPS567431A JP S567431 A JPS567431 A JP S567431A JP 8205279 A JP8205279 A JP 8205279A JP 8205279 A JP8205279 A JP 8205279A JP S567431 A JPS567431 A JP S567431A
Authority
JP
Japan
Prior art keywords
vacuum
pressure
vessel
vacuum vessel
revolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8205279A
Other languages
Japanese (ja)
Inventor
Takashi Matsumoto
Masashi Kikuchi
Shigeo Uotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Ulvac Inc
Original Assignee
Mitsubishi Electric Corp
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Ulvac Inc filed Critical Mitsubishi Electric Corp
Priority to JP8205279A priority Critical patent/JPS567431A/en
Publication of JPS567431A publication Critical patent/JPS567431A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To return the pressure in a vacuum vessel to fixed pressure rapidly even when the pressure alters by a method wherein the number of revolution of vacuum pumps for exhaust is changed in response to the variation of the pressure in the vacuum vessel. CONSTITUTION:A vacuum vessel 11 is provided with an introducing pipe 12 to which a variable leaking valve for introducing etching gas is attached, and vacuum pumps 13, 14 for exhausting the gas are fitted. A vacuum meter 19 is attached which detects the degree of vacuum in the vacuum vessel 11, the degree of vacuum is converted into voltage by means of a convertor 20, the output voltage is given to a comparator 21 in which the reference value is previously decided at fixed pressure, and the difference is amplified and forwarded to an output circuit of a motor 22 of the pump 13. Thus, the number of revolution of the motor 22 is changed in response to pressure in the vacuum vessel 11, the inside of the vessel 11 is kept at fixed pressure, and uniform etching, etc. are enabled at all times.
JP8205279A 1979-06-30 1979-06-30 Method and apparatus for controlling low pressure of vacuum apparatus Pending JPS567431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8205279A JPS567431A (en) 1979-06-30 1979-06-30 Method and apparatus for controlling low pressure of vacuum apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8205279A JPS567431A (en) 1979-06-30 1979-06-30 Method and apparatus for controlling low pressure of vacuum apparatus

Publications (1)

Publication Number Publication Date
JPS567431A true JPS567431A (en) 1981-01-26

Family

ID=13763733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8205279A Pending JPS567431A (en) 1979-06-30 1979-06-30 Method and apparatus for controlling low pressure of vacuum apparatus

Country Status (1)

Country Link
JP (1) JPS567431A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60219747A (en) * 1984-04-16 1985-11-02 Plasma Syst:Kk Controlling method for vacuum degree in treatment chamber of semiconductor production equipment and device therefor
JPS62152529A (en) * 1985-12-27 1987-07-07 Hitachi Ltd processing equipment
JPH029437A (en) * 1988-06-28 1990-01-12 Ishikawajima Harima Heavy Ind Co Ltd Vacuum exhausting method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60219747A (en) * 1984-04-16 1985-11-02 Plasma Syst:Kk Controlling method for vacuum degree in treatment chamber of semiconductor production equipment and device therefor
JPS62152529A (en) * 1985-12-27 1987-07-07 Hitachi Ltd processing equipment
JPH029437A (en) * 1988-06-28 1990-01-12 Ishikawajima Harima Heavy Ind Co Ltd Vacuum exhausting method

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