JPS567484A - Manufacturing of light receiving element used in printer or the like - Google Patents
Manufacturing of light receiving element used in printer or the likeInfo
- Publication number
- JPS567484A JPS567484A JP8282279A JP8282279A JPS567484A JP S567484 A JPS567484 A JP S567484A JP 8282279 A JP8282279 A JP 8282279A JP 8282279 A JP8282279 A JP 8282279A JP S567484 A JPS567484 A JP S567484A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- wafer
- zones
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To facilitate the formation of a plurality of regions in a wafer by firstly forming a diffused layer in a semiconductor wafer after applying photoetching twice to the wafer, and then forming this diffused layer into a predetermined pattern and forming a border part not showing an electromotive operation depending upon light. CONSTITUTION:A resist film 9 is applied on both front and rear surfaces of an N- type Si wafer 7, a mask 10 having a predetermined pattern is loaded on the above film 9, the mask 10 is subjected to electric light development to open a window in the film 9, and a P-type impurity is diffused to form a P-type layer 8. Then, the front and rear surfaces of the layer 8 are coated with an Al or Cr conductive layer 11, and subjected again to photoetching to remove the layer 11 in a predetermined region and to expose a part of the substrate 7. That is, a border part 12 consisting of the N-type substrate 7, a plurality of zones 13 and a P-type layer 8 patterned by slits 14 are obtained, and these elements are separately cut. By this procedure, it becomes possible to form the plurality of zones in proximity, and therefore these zones are suitable as light receiving elements for a printer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8282279A JPS567484A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of light receiving element used in printer or the like |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8282279A JPS567484A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of light receiving element used in printer or the like |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS567484A true JPS567484A (en) | 1981-01-26 |
Family
ID=13785087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8282279A Pending JPS567484A (en) | 1979-06-29 | 1979-06-29 | Manufacturing of light receiving element used in printer or the like |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS567484A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5983294U (en) * | 1982-11-26 | 1984-06-05 | 佐々木 勝 | duct |
-
1979
- 1979-06-29 JP JP8282279A patent/JPS567484A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5983294U (en) * | 1982-11-26 | 1984-06-05 | 佐々木 勝 | duct |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5640269A (en) | Preparation of semiconductor device | |
| JPS55138267A (en) | Manufacture of semiconductor integrated circuit containing resistance element | |
| EP0087312A3 (en) | Formation of regions of different conductivity types in a substrate | |
| JPS55130176A (en) | Field effect semiconductor element and method of fabricating the same | |
| JPS567484A (en) | Manufacturing of light receiving element used in printer or the like | |
| JPS5539672A (en) | Manufacturing semiconductor device | |
| JPS55113343A (en) | Manufacture of semiconductor device | |
| JPS5688358A (en) | Manufacture of semiconductor device | |
| JPS55153325A (en) | Manufacture of semiconductor device | |
| JPS5642366A (en) | Manufacture of semiconductor device | |
| GB993388A (en) | Improvements in or relating to semiconductor devices | |
| JPS5633826A (en) | Manufacture of target | |
| JPS5617059A (en) | Semiconductor switching element | |
| JPS5610930A (en) | Manufacture of semiconductor device | |
| JPS55154776A (en) | Manufacture of semiconductor device with adjacent different conducting type diffused regions | |
| JPS5661156A (en) | Preparation of semiconductor resistor | |
| JPS5558532A (en) | X-ray exposing mask and manufacture of semiconductor device | |
| JPS559477A (en) | Method of making semiconductor device | |
| JPS5572074A (en) | Production of semiconductor device | |
| JPS54139486A (en) | Manufacture of semiconductor device | |
| JPS5490979A (en) | Integrated circuit | |
| JPS5599720A (en) | Method and device of manufacturing semiconductor device | |
| JPS55123143A (en) | Manufacture of semiconductor device | |
| JPS5678122A (en) | Formation of pattern | |
| JPS5445571A (en) | Manufacture for semiconductor device |