JPS5679477A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS5679477A
JPS5679477A JP3728580A JP3728580A JPS5679477A JP S5679477 A JPS5679477 A JP S5679477A JP 3728580 A JP3728580 A JP 3728580A JP 3728580 A JP3728580 A JP 3728580A JP S5679477 A JPS5679477 A JP S5679477A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
electrode
work function
type
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3728580A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP3728580A priority Critical patent/JPS5679477A/en
Publication of JPS5679477A publication Critical patent/JPS5679477A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a high photoelectric conversion efficiency by setting the first and second electrodes on one surface or one back surface of an Si-substrate via a silicon nitride film, thereby differentiating a work function or a conductive type. CONSTITUTION:An Si3N4 or Si3N4-X film 6 is set on a dope or non-dope Si substrate 1 and then a positive electrode 12 and a negative electrode 11 are arranged thereon with a certain intervals. The electrode 12 is formed by Pt, Au or P type Si layer having a large work function, while the electrode 11 is formed by Al, Be or an N type Si layer having less than 4eV of work function. When the light 8 is irradiated according to this constitution, generated electrons and positive holes are gathered to the electrodes 11 and 12 respectively within very short diffusion distances. Therefore, since the possibility of recoupling decreases, the photoelectric conversion efficiency increases.
JP3728580A 1980-03-24 1980-03-24 Photoelectric conversion device Pending JPS5679477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3728580A JPS5679477A (en) 1980-03-24 1980-03-24 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3728580A JPS5679477A (en) 1980-03-24 1980-03-24 Photoelectric conversion device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15664079A Division JPS5679479A (en) 1979-12-03 1979-12-03 Photoelectric conversion device

Publications (1)

Publication Number Publication Date
JPS5679477A true JPS5679477A (en) 1981-06-30

Family

ID=12493427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3728580A Pending JPS5679477A (en) 1980-03-24 1980-03-24 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS5679477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017016789A1 (en) * 2015-07-28 2017-02-02 Imec Vzw Back contact photovoltaic cells with induced junctions

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017016789A1 (en) * 2015-07-28 2017-02-02 Imec Vzw Back contact photovoltaic cells with induced junctions
JP2018521502A (en) * 2015-07-28 2018-08-02 アイメック・ヴェーゼットウェーImec Vzw Back contact type photovoltaic cell with inductive coupling

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