JPS5679477A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS5679477A JPS5679477A JP3728580A JP3728580A JPS5679477A JP S5679477 A JPS5679477 A JP S5679477A JP 3728580 A JP3728580 A JP 3728580A JP 3728580 A JP3728580 A JP 3728580A JP S5679477 A JPS5679477 A JP S5679477A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- electrode
- work function
- type
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a high photoelectric conversion efficiency by setting the first and second electrodes on one surface or one back surface of an Si-substrate via a silicon nitride film, thereby differentiating a work function or a conductive type. CONSTITUTION:An Si3N4 or Si3N4-X film 6 is set on a dope or non-dope Si substrate 1 and then a positive electrode 12 and a negative electrode 11 are arranged thereon with a certain intervals. The electrode 12 is formed by Pt, Au or P type Si layer having a large work function, while the electrode 11 is formed by Al, Be or an N type Si layer having less than 4eV of work function. When the light 8 is irradiated according to this constitution, generated electrons and positive holes are gathered to the electrodes 11 and 12 respectively within very short diffusion distances. Therefore, since the possibility of recoupling decreases, the photoelectric conversion efficiency increases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3728580A JPS5679477A (en) | 1980-03-24 | 1980-03-24 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3728580A JPS5679477A (en) | 1980-03-24 | 1980-03-24 | Photoelectric conversion device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15664079A Division JPS5679479A (en) | 1979-12-03 | 1979-12-03 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5679477A true JPS5679477A (en) | 1981-06-30 |
Family
ID=12493427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3728580A Pending JPS5679477A (en) | 1980-03-24 | 1980-03-24 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5679477A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017016789A1 (en) * | 2015-07-28 | 2017-02-02 | Imec Vzw | Back contact photovoltaic cells with induced junctions |
-
1980
- 1980-03-24 JP JP3728580A patent/JPS5679477A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017016789A1 (en) * | 2015-07-28 | 2017-02-02 | Imec Vzw | Back contact photovoltaic cells with induced junctions |
| JP2018521502A (en) * | 2015-07-28 | 2018-08-02 | アイメック・ヴェーゼットウェーImec Vzw | Back contact type photovoltaic cell with inductive coupling |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5679477A (en) | Photoelectric conversion device | |
| JPS5679479A (en) | Photoelectric conversion device | |
| JPS5687380A (en) | Semiconductor device for detection of radiant light | |
| JPS55154784A (en) | Photoreceptor | |
| JPS55130182A (en) | P-n hetero junction solar battery | |
| JPS5681982A (en) | Power phototransistor | |
| JPS5772369A (en) | Semiconductor device building in light receiving element | |
| JPS55162223A (en) | Semiconductor device and its preparation | |
| JPS5613780A (en) | Preparation of semiconductor device | |
| JPS551133A (en) | Photoelectric conversion semiconductor | |
| JPS5329685A (en) | Photo semiconductor device | |
| JPS5779685A (en) | Light emitting diode device | |
| JPS54102982A (en) | Charge transfer type semiconductor device | |
| JPS5742180A (en) | Light emitting diode | |
| JPS54101687A (en) | Solar battery unit | |
| JPS5640234A (en) | Light-electricity converting element | |
| JPS5739571A (en) | Constant current diode | |
| JPS57183076A (en) | Field control type optical semiconductor device | |
| JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
| JPS5779679A (en) | Semiconductor photoelectric conversion device | |
| JPS57134960A (en) | Semiconductor device | |
| FR2315762A1 (en) | Low light level photocathode - has electrons emitted at active surface passing through substrate microchannels and positive electrode | |
| JPS57186361A (en) | Transistor having high-dielectric strength | |
| JPS5591155A (en) | Semiconductor integrated circuit device | |
| JPS5587476A (en) | Semiconductor device |