JPS5687338A - Detecting method of defect in insulating film - Google Patents
Detecting method of defect in insulating filmInfo
- Publication number
- JPS5687338A JPS5687338A JP16440579A JP16440579A JPS5687338A JP S5687338 A JPS5687338 A JP S5687338A JP 16440579 A JP16440579 A JP 16440579A JP 16440579 A JP16440579 A JP 16440579A JP S5687338 A JPS5687338 A JP S5687338A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- poly
- film
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To easily make an evaluation of defect by a method wherein a conductive film capable of being anodically oxidized is formed on an insulating film surface on an Si substrate and then, dipped in an electrolyte and passed by a current through to anodically oxidize the only conductive film on a defective part of the insulating film. CONSTITUTION:After the insulating film 2 of an SiO2 film and Si3N4 film and the like is formed on the Si substrate 1, the conductive film 3 such as a poly-Si applied an impurity dope is mounted on the insulating film in land-shape pattern. The substrate 1 is dipped in the electrolyte and passed by a current therethrough with the substrate as the positive electrode and a platinum electrode and the like as the negative electrode. With a pin-hole 9 in the insulating film 2, the poly-Si 3 and the Si substrate 1 is bypassed to permit currents to flow and anodically oxidized to effect formation of the SiO2 film the poly-Si surface. Then, the substrate 1 is soaked in a fluoric nitric acid mixed solution to remove only the poly-Si. Whereby since only the poly-Si pattern of which Si is formed on the surface of the part perforated the pin-hole stays, the pin-hole can be evaluated with the naked eye.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16440579A JPS5687338A (en) | 1979-12-17 | 1979-12-17 | Detecting method of defect in insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16440579A JPS5687338A (en) | 1979-12-17 | 1979-12-17 | Detecting method of defect in insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5687338A true JPS5687338A (en) | 1981-07-15 |
Family
ID=15792505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16440579A Pending JPS5687338A (en) | 1979-12-17 | 1979-12-17 | Detecting method of defect in insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5687338A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS574169U (en) * | 1980-06-09 | 1982-01-09 | ||
| DE19623822A1 (en) * | 1995-10-17 | 1997-04-24 | Mitsubishi Electric Corp | Evaluation method for semiconductor device |
-
1979
- 1979-12-17 JP JP16440579A patent/JPS5687338A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS574169U (en) * | 1980-06-09 | 1982-01-09 | ||
| DE19623822A1 (en) * | 1995-10-17 | 1997-04-24 | Mitsubishi Electric Corp | Evaluation method for semiconductor device |
| DE19623822C2 (en) * | 1995-10-17 | 1998-06-18 | Mitsubishi Electric Corp | Electrochemical process in the manufacture of a semiconductor device |
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