JPS5687352A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5687352A
JPS5687352A JP16426679A JP16426679A JPS5687352A JP S5687352 A JPS5687352 A JP S5687352A JP 16426679 A JP16426679 A JP 16426679A JP 16426679 A JP16426679 A JP 16426679A JP S5687352 A JPS5687352 A JP S5687352A
Authority
JP
Japan
Prior art keywords
type
resistor
layer
collector region
surface layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16426679A
Other languages
Japanese (ja)
Inventor
Tadashi Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16426679A priority Critical patent/JPS5687352A/en
Publication of JPS5687352A publication Critical patent/JPS5687352A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a resistor body having a small occupying area in the semiconductor device by a method wherein a reverse conducting collector region and a reverse conducting resistor region coming in contact with the collector region are formed on a unilateral conducting semiconductor layer having partially a buried layer of high impurity concentration. CONSTITUTION:A p type surface layer 10 is provided on the p type substrate 1 having partially the n<+> type buried layer 2 of high concentration, and the n type collector region 11 is formed in the p type surface layer on the buried layer. At the same time, the n<+> type resistor layer 5 is formed in the p type surface layer to come in contact with the n type collector region. Accordingly the occupying area of the resistor can be decreased, and the resistor can be arranged freely in the chip.
JP16426679A 1979-12-18 1979-12-18 Semiconductor device Pending JPS5687352A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16426679A JPS5687352A (en) 1979-12-18 1979-12-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16426679A JPS5687352A (en) 1979-12-18 1979-12-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687352A true JPS5687352A (en) 1981-07-15

Family

ID=15789813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16426679A Pending JPS5687352A (en) 1979-12-18 1979-12-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687352A (en)

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