JPS5690A - Random access memory - Google Patents
Random access memoryInfo
- Publication number
- JPS5690A JPS5690A JP7586679A JP7586679A JPS5690A JP S5690 A JPS5690 A JP S5690A JP 7586679 A JP7586679 A JP 7586679A JP 7586679 A JP7586679 A JP 7586679A JP S5690 A JPS5690 A JP S5690A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- word line
- stored
- difference
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7586679A JPS5690A (en) | 1979-06-15 | 1979-06-15 | Random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7586679A JPS5690A (en) | 1979-06-15 | 1979-06-15 | Random access memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5690A true JPS5690A (en) | 1981-01-06 |
Family
ID=13588595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7586679A Pending JPS5690A (en) | 1979-06-15 | 1979-06-15 | Random access memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5690A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832296A (ja) * | 1981-08-20 | 1983-02-25 | Mitsubishi Electric Corp | Ｍｏｓダイナミツクメモリ |
| JPH03192594A (ja) * | 1990-10-22 | 1991-08-22 | Mitsubishi Electric Corp | Ｍｏｓダイナミックメモリ |
-
1979
- 1979-06-15 JP JP7586679A patent/JPS5690A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5832296A (ja) * | 1981-08-20 | 1983-02-25 | Mitsubishi Electric Corp | Ｍｏｓダイナミツクメモリ |
| JPH03192594A (ja) * | 1990-10-22 | 1991-08-22 | Mitsubishi Electric Corp | Ｍｏｓダイナミックメモリ |
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