JPS5697809A - Method and device for measuring thickness of dielectric layer with sandwiched conductive layer - Google Patents
Method and device for measuring thickness of dielectric layer with sandwiched conductive layerInfo
- Publication number
- JPS5697809A JPS5697809A JP17215679A JP17215679A JPS5697809A JP S5697809 A JPS5697809 A JP S5697809A JP 17215679 A JP17215679 A JP 17215679A JP 17215679 A JP17215679 A JP 17215679A JP S5697809 A JPS5697809 A JP S5697809A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric layer
- dielectric
- conductive layer
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 abstract 3
- 230000006378 damage Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
PURPOSE: To measure the thickness of a dielectric layer rapidly without destruction by measuring electric static capacity on a sheet top surface side and reverse surface side across a conductive layer.
CONSTITUTION: The surface of the 2nd dielectric layer 3 of sheet SHT consisting of the 1st dielectric layer 1, conductive layer 2 and the 2nd dielectric layer 3 is brought into close contact with the smooth surface of measurement table 5. The electrostatic capacity (the 1st electrostatic capacity) between conductive layer 2 and electrode 4 is expressed by equation I, where the layer thickness of the 1st dielectric layer 1, its dielectric constant, the layer thickness of conductive layer 2, the layer thickness of the 2nd dielectric layer 3, its dielectric constant, the area of measurement electrode 4, the distance between it and the smooth surface, and the dielectric constant under a vacuum are denoted as d1, ε1, d2, d3, ε3, S, d0, and ε0 respectively and conductive layer 2 is grounded. Similarly, the 2nd electrostatic capacity C2 is expressed by equation II when the surface of the 1st dielectric layer 1 is brought into close contact with the smooth surface of measurement table 5. Therefore, thickness d1 and d3 of dielectric layers 1 and 2 can be calculated by calculating equations III and IV by using said actually-measured values C1 and C2.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17215679A JPS5697809A (en) | 1979-12-29 | 1979-12-29 | Method and device for measuring thickness of dielectric layer with sandwiched conductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17215679A JPS5697809A (en) | 1979-12-29 | 1979-12-29 | Method and device for measuring thickness of dielectric layer with sandwiched conductive layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5697809A true JPS5697809A (en) | 1981-08-06 |
Family
ID=15936598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17215679A Pending JPS5697809A (en) | 1979-12-29 | 1979-12-29 | Method and device for measuring thickness of dielectric layer with sandwiched conductive layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5697809A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009216506A (en) * | 2008-03-10 | 2009-09-24 | Fujitsu Microelectronics Ltd | Capacitance sensor |
-
1979
- 1979-12-29 JP JP17215679A patent/JPS5697809A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009216506A (en) * | 2008-03-10 | 2009-09-24 | Fujitsu Microelectronics Ltd | Capacitance sensor |
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