JPS5698873A - Integrated circuit - Google Patents

Abstract

PURPOSE:To simplify the preparation process of the ICs, by making the gate, source and drain electrodes with the use of platinum silicides made in the presence of polycrystal or amorphous Si and by making the wires that extend from the said electrodes by the same process on the same layer. CONSTITUTION:On the P type semiconductor Si substrate 31, the device separation layer 32, the P<+> type region 33 as the channel stopper and the N<+> type layers 34a, 34b and 34c which correspond to the source and drain regions are formed, and the N type layer 35 is further formed as the active layer. Next, the part where the gate electrodes 36a and 36b of Schottky junction border on the layer 35 and the part where the ohmic electrodes 36c, 36d and 36b of source and drain regions border on the layer 35 are formed. These are made of platinum silicide consisting of polycrystal Si. On the platinum silicide the metal layer 37a-37d are preliminerily placed that is not platinum itself and whose alloy temperature is high enough. After this the wires that extend from these electrodes to the device (disignated by 38) are made by the same process.