JPS5710932A - Beam blanking method in electron beam exposure - Google Patents

Beam blanking method in electron beam exposure

Info

Publication number
JPS5710932A
JPS5710932A JP8619480A JP8619480A JPS5710932A JP S5710932 A JPS5710932 A JP S5710932A JP 8619480 A JP8619480 A JP 8619480A JP 8619480 A JP8619480 A JP 8619480A JP S5710932 A JPS5710932 A JP S5710932A
Authority
JP
Japan
Prior art keywords
exposure
region
electron
exposed
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8619480A
Other languages
Japanese (ja)
Inventor
Moriyuki Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP8619480A priority Critical patent/JPS5710932A/en
Publication of JPS5710932A publication Critical patent/JPS5710932A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To avoid unnecessary exposure by a method wherein a fixed region is exposed by means of electron beam irradiation, electron beams are deflected by means of a deflection means for blanking, and a position of the electron beam irradiation is moved in the direction of a region already exposed from a position where exposure is completed. CONSTITUTION:The electron beams scan up to the position E where exposure is completed from a position S where exposure is commenced in the exposure region 15 on a material to be exposed. When the direction of a deflection electrode for blanking is set previously so that the direction D' of the deflection of electron rays is directed into the exposure region 15 already exposed, the direction of the electron beams passes in the direction of the direction D' of the region already exposed. Accordingly, unnecessary exposure is not conducted after exposure.
JP8619480A 1980-06-25 1980-06-25 Beam blanking method in electron beam exposure Pending JPS5710932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8619480A JPS5710932A (en) 1980-06-25 1980-06-25 Beam blanking method in electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8619480A JPS5710932A (en) 1980-06-25 1980-06-25 Beam blanking method in electron beam exposure

Publications (1)

Publication Number Publication Date
JPS5710932A true JPS5710932A (en) 1982-01-20

Family

ID=13879961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8619480A Pending JPS5710932A (en) 1980-06-25 1980-06-25 Beam blanking method in electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5710932A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186741A (en) * 1988-01-18 1989-07-26 Mitsubishi Electric Corp Blanking device for electron beam device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01186741A (en) * 1988-01-18 1989-07-26 Mitsubishi Electric Corp Blanking device for electron beam device

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