JPS5776837A - Apparatus for multipile electron beam exposure - Google Patents

Apparatus for multipile electron beam exposure

Info

Publication number
JPS5776837A
JPS5776837A JP55152688A JP15268880A JPS5776837A JP S5776837 A JPS5776837 A JP S5776837A JP 55152688 A JP55152688 A JP 55152688A JP 15268880 A JP15268880 A JP 15268880A JP S5776837 A JPS5776837 A JP S5776837A
Authority
JP
Japan
Prior art keywords
commonly
anode
beam shaping
electron beams
arranged under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55152688A
Other languages
Japanese (ja)
Inventor
Tateaki Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP55152688A priority Critical patent/JPS5776837A/en
Publication of JPS5776837A publication Critical patent/JPS5776837A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To readily improve the exposing speed by constituting the apparatus by a multiple electron beams source, beam converging devices, a beam shaping mask, and a bi-dimensional deflecting device. CONSTITUTION:The beam selectively irradiated from holes 5 in an anode 6 of the multiple electron beams source are commonly converged by a first beam converging device 7 arranged under the anode 6 and projected on beam shaping holes 9 in the beam shaping mask 8. The beam shaping hole 9 is of a square shape, alined with the each hole in the anode 6, and arranged in a grid shape. The shaped electron beams are commonly reduced and converged by the second beam are commonly deflected 10 which is arranged under the mask. The reduced beams are commonly deflected by the bi-dimensional deflecting device 13 which comprises deflecting electrodes 11 and 12 and are arranged under the converging device 10, and projected on a specimen 14.
JP55152688A 1980-10-30 1980-10-30 Apparatus for multipile electron beam exposure Pending JPS5776837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55152688A JPS5776837A (en) 1980-10-30 1980-10-30 Apparatus for multipile electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55152688A JPS5776837A (en) 1980-10-30 1980-10-30 Apparatus for multipile electron beam exposure

Publications (1)

Publication Number Publication Date
JPS5776837A true JPS5776837A (en) 1982-05-14

Family

ID=15545949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55152688A Pending JPS5776837A (en) 1980-10-30 1980-10-30 Apparatus for multipile electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5776837A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262419A (en) * 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd Pattern forming device and production of semiconductor device utilizing the same
JPS63269529A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269527A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269523A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269524A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269522A (en) * 1987-04-28 1988-11-07 Canon Inc Electron beam device
JPS63269526A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269531A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262419A (en) * 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd Pattern forming device and production of semiconductor device utilizing the same
JPS63269529A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269527A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269523A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269524A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269522A (en) * 1987-04-28 1988-11-07 Canon Inc Electron beam device
JPS63269526A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device
JPS63269531A (en) * 1987-04-28 1988-11-07 Canon Inc Charged particle beam device

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