JPS57120355A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS57120355A
JPS57120355A JP56005900A JP590081A JPS57120355A JP S57120355 A JPS57120355 A JP S57120355A JP 56005900 A JP56005900 A JP 56005900A JP 590081 A JP590081 A JP 590081A JP S57120355 A JPS57120355 A JP S57120355A
Authority
JP
Japan
Prior art keywords
layer
polyimide
subsequently
thick film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56005900A
Other languages
Japanese (ja)
Inventor
Katsuya Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56005900A priority Critical patent/JPS57120355A/en
Publication of JPS57120355A publication Critical patent/JPS57120355A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To form a thick film for preventing a malfunction by alpha rays in an accurate pattern by forming a thick film of synthetic resin on a predetermined main face of semiconductor substrate by using a dry film and a lift-off technique. CONSTITUTION:A P-N junction is formed and a thermo compression bonding by dry film is provided for an Si substrate 20 including a field oxide film 21, a bonding pad 22 and a protective layer 23 by utilizing a resist layer 12 exposed by exfoliating its mylar polyester sheet. Subsequently, an exposure is established by using a mask only to a predetermined area wherein polyimide thick film is not formed and a resist layer 12' is left in the predetermined are through a processing. Subsequently, a polyimide resin liquid is coated to form a polyimide layer 30. Subsequently, the foregoing layer 12' is removed and a polyimide layer 30' for which a patterning is provided is formed by a lift-off technique.
JP56005900A 1981-01-20 1981-01-20 Manufacture of semiconductor element Pending JPS57120355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56005900A JPS57120355A (en) 1981-01-20 1981-01-20 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56005900A JPS57120355A (en) 1981-01-20 1981-01-20 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS57120355A true JPS57120355A (en) 1982-07-27

Family

ID=11623761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56005900A Pending JPS57120355A (en) 1981-01-20 1981-01-20 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS57120355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60183750A (en) * 1984-02-09 1985-09-19 フエアチアイルド　カメラ　アンド　インストルメント　コーポレーシヨン Semiconductor structure with alpha-ray resistant film and method of producing same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53106585A (en) * 1977-02-28 1978-09-16 Nec Corp Production of semiconductor device
JPS5643614A (en) * 1979-09-17 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Production of plug for optical fiber connector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53106585A (en) * 1977-02-28 1978-09-16 Nec Corp Production of semiconductor device
JPS5643614A (en) * 1979-09-17 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Production of plug for optical fiber connector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60183750A (en) * 1984-02-09 1985-09-19 フエアチアイルド　カメラ　アンド　インストルメント　コーポレーシヨン Semiconductor structure with alpha-ray resistant film and method of producing same

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