JPS57138083A - Gate driving method for ion implantation magnetic bubble memory element - Google Patents

Gate driving method for ion implantation magnetic bubble memory element

Info

Publication number
JPS57138083A
JPS57138083A JP2220781A JP2220781A JPS57138083A JP S57138083 A JPS57138083 A JP S57138083A JP 2220781 A JP2220781 A JP 2220781A JP 2220781 A JP2220781 A JP 2220781A JP S57138083 A JPS57138083 A JP S57138083A
Authority
JP
Japan
Prior art keywords
bubble
pulse current
loop
magnetic field
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2220781A
Other languages
Japanese (ja)
Other versions
JPS6037547B2 (en
Inventor
Kazunari Yoneno
Makoto Ohashi
Tsutomu Miyashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2220781A priority Critical patent/JPS6037547B2/en
Priority to US06/283,182 priority patent/US4415988A/en
Priority to DE8181303260T priority patent/DE3176282D1/en
Priority to EP81303260A priority patent/EP0044708B1/en
Publication of JPS57138083A publication Critical patent/JPS57138083A/en
Publication of JPS6037547B2 publication Critical patent/JPS6037547B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0875—Organisation of a plurality of magnetic shift registers
    • G11C19/0883—Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders

Abstract

PURPOSE:To increase the reliability of a memory device, by increasing the bias margin and pulse current margin, through the application of pulse current with pedestal to a conductor pattern of a transfer gate. CONSTITUTION:A ion implantation layer is formed on all the surfaces of a crystal plate except a plurality of consecutive disc pattern regions to a bubble crystal substrate and the pattern regions are referred to as a bubble transfer path. When a bubble rotating magnetic field HR of a major loop 6 goes to a direction D, the bubble is transferred to a position (a). When a pulse current is applied to a conductor pattern 8 and a bias magnetic field at a hairpin loop is locally weakened, the bubble is extended and moves to a position (b) of a minor loop 7. Next, accompanied with the rotation of the magnetic field HR, the bubble moves to positions (c) and (d) of the loop 7. This driving current is formed by adding a pedestal pulse current I2 to a main pulse current I1.
JP2220781A 1980-07-15 1981-02-19 Gate driving method for ion-implanted magnetic bubble memory device Expired JPS6037547B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2220781A JPS6037547B2 (en) 1981-02-19 1981-02-19 Gate driving method for ion-implanted magnetic bubble memory device
US06/283,182 US4415988A (en) 1980-07-15 1981-07-14 Magnetic bubble memory device
DE8181303260T DE3176282D1 (en) 1980-07-15 1981-07-15 Magnetic bubble memory device
EP81303260A EP0044708B1 (en) 1980-07-15 1981-07-15 Magnetic bubble memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2220781A JPS6037547B2 (en) 1981-02-19 1981-02-19 Gate driving method for ion-implanted magnetic bubble memory device

Publications (2)

Publication Number Publication Date
JPS57138083A true JPS57138083A (en) 1982-08-26
JPS6037547B2 JPS6037547B2 (en) 1985-08-27

Family

ID=12076343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2220781A Expired JPS6037547B2 (en) 1980-07-15 1981-02-19 Gate driving method for ion-implanted magnetic bubble memory device

Country Status (1)

Country Link
JP (1) JPS6037547B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61192053U (en) * 1985-05-23 1986-11-29

Also Published As

Publication number Publication date
JPS6037547B2 (en) 1985-08-27

Similar Documents

Publication Publication Date Title
GB1464755A (en) Two-phase charge coupled devices
JPS51117838A (en) Semiconductor memory device
JPS5352072A (en) Pattern for alignment
JPS5329703A (en) Production of thin magnetic film
GB1443668A (en) Magnetic recording head
JPS52106275A (en) Floating type nonvoltile semiconductor memory element
JPS5310410A (en) Read-out control system for magnetic tape
JPS5357837A (en) Electrostatic recording body
US4423489A (en) Replicator for ion-implanted bubble domain devices using stretching action of charged wall
JPS5329679A (en) Junction type field effect semiconductor device
EP0283276A3 (en) Semiconductor device having heterojunction and method for producing same
JPS5269314A (en) Multiple element magnetic head
JPS52127157A (en) Manufacture of semiconductor
JPS5385157A (en) Production of semiconductor device
JPS5384691A (en) Production of semiconductor device
JPS5277681A (en) Nonvolatile memory device
JPS5694778A (en) Semiconductor memory device
WO1979000360A1 (en) Conductor access bubble memory
JPS51112237A (en) Magnetic valve data writing unit
JPS52100197A (en) Cylindrical magnetic section element
JPS56140583A (en) Current access type bubble magnetic domain element
JPS5856193B2 (en) magnetic bubble memory element
JPS5755582A (en) Magnetic bubble memory element
JPS53120416A (en) Production of magnetic head of thin film type
JPS5226163A (en) Manufacturing method of semi-conductor crystal