JPS57167635A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57167635A
JPS57167635A JP56035022A JP3502281A JPS57167635A JP S57167635 A JPS57167635 A JP S57167635A JP 56035022 A JP56035022 A JP 56035022A JP 3502281 A JP3502281 A JP 3502281A JP S57167635 A JPS57167635 A JP S57167635A
Authority
JP
Japan
Prior art keywords
substrate
heat treatment
silicon
onto
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56035022A
Other languages
Japanese (ja)
Other versions
JPS6216537B2 (en
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56035022A priority Critical patent/JPS57167635A/en
Priority to DE8282301212T priority patent/DE3280219D1/en
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167635A publication Critical patent/JPS57167635A/en
Priority to US06/598,544 priority patent/US4597804A/en
Publication of JPS6216537B2 publication Critical patent/JPS6216537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Abstract

PURPOSE:To omit a polishing process by thermally treating a silicon substrate, forming an epitaxial layer onto the surface of the substrate and diffusing an impurity to the epitaxial layer. CONSTITUTION:Heat treatment containing a temperature raising process at the rate of 5 deg.C/min or lower is executed to the semiconductor substrate 11 consisting of silicon, the silicon epitxial layer 12 with not less than 2mum thickness is formed onto the surface of the substrate and the impurity is diffused to the layer 12. Heat treatment through the temperature raising process is repeated at least once or more, and the speed of a temperature rise of the first process is made the same as or later than the speed of the temperature rise after the second time, thus shaping a crystal defect up to the surface of the substrate in excellent controllability. A protective film such as SiO2 is formed or an oxygen atomosphere is introduced during a heat treatment process in order to protect the surface of the substrate, and an oxide film is shaped onto the surface of the substrate.
JP56035022A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167635A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56035022A JPS57167635A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
DE8282301212T DE3280219D1 (en) 1981-03-11 1982-03-10 METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT WITH GLOWING A SEMICONDUCTOR BODY.
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer
US06/598,544 US4597804A (en) 1981-03-11 1984-04-12 Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035022A JPS57167635A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167635A true JPS57167635A (en) 1982-10-15
JPS6216537B2 JPS6216537B2 (en) 1987-04-13

Family

ID=12430429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035022A Granted JPS57167635A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167635A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251050U (en) * 1985-09-20 1987-03-30

Also Published As

Publication number Publication date
JPS6216537B2 (en) 1987-04-13

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