JPS5717155A - Resin sealing type semiconductor device - Google Patents

Resin sealing type semiconductor device

Info

Publication number
JPS5717155A
JPS5717155A JP9151580A JP9151580A JPS5717155A JP S5717155 A JPS5717155 A JP S5717155A JP 9151580 A JP9151580 A JP 9151580A JP 9151580 A JP9151580 A JP 9151580A JP S5717155 A JPS5717155 A JP S5717155A
Authority
JP
Japan
Prior art keywords
aluminum
semiconductor device
leads
resin sealing
aluminum foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9151580A
Other languages
Japanese (ja)
Inventor
Makoto Shimanuki
Tadashi Katsura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9151580A priority Critical patent/JPS5717155A/en
Publication of JPS5717155A publication Critical patent/JPS5717155A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/456Materials
    • H10W70/457Materials of metallic layers on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To obtain a low-cost semiconductor device by contacting a semiconductor pellet having an aluminum electrode with leads wherein aluminum foil is contacted with the surfaces of a plurality of leads locating out of the semiconductor pellet and the aluminum electrode and the aluminum foil are connected by fine lines of aluminum metal for resin sealing. CONSTITUTION:Aluminum foil is selectively sticked to a part of the lead 2 out of leads 1, 2 consisting of iron, copper, or the alloy of the iron and copper. A semiconductor pellet 4 is loaded on the lead 1 by blazing and an evaporated aluminum electrode on the pellet 4 and the aluminum foil 3 are connected by aluminum wires 5. Next, all of them are sealed by resin 6. In this way, all the connecting points become aluminum-aluminun for stable adhesion and a low-cost semiconductor can be obtained without using a gold material.
JP9151580A 1980-07-03 1980-07-03 Resin sealing type semiconductor device Pending JPS5717155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9151580A JPS5717155A (en) 1980-07-03 1980-07-03 Resin sealing type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9151580A JPS5717155A (en) 1980-07-03 1980-07-03 Resin sealing type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5717155A true JPS5717155A (en) 1982-01-28

Family

ID=14028539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9151580A Pending JPS5717155A (en) 1980-07-03 1980-07-03 Resin sealing type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5717155A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0731505A3 (en) * 1995-03-06 1998-04-15 Motorola, Inc. Semiconductor leadframe structure and method of manufacturing the same
CN106024745A (en) * 2016-07-01 2016-10-12 长电科技(宿迁)有限公司 Pin mounting structure of semiconductor and welding method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0731505A3 (en) * 1995-03-06 1998-04-15 Motorola, Inc. Semiconductor leadframe structure and method of manufacturing the same
CN106024745A (en) * 2016-07-01 2016-10-12 长电科技(宿迁)有限公司 Pin mounting structure of semiconductor and welding method thereof

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