JPS5718320A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5718320A
JPS5718320A JP9450480A JP9450480A JPS5718320A JP S5718320 A JPS5718320 A JP S5718320A JP 9450480 A JP9450480 A JP 9450480A JP 9450480 A JP9450480 A JP 9450480A JP S5718320 A JPS5718320 A JP S5718320A
Authority
JP
Japan
Prior art keywords
film
pattern
nitride film
boro
plasma nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9450480A
Other languages
Japanese (ja)
Inventor
Kazuya Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9450480A priority Critical patent/JPS5718320A/en
Publication of JPS5718320A publication Critical patent/JPS5718320A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To form a diffused layer selectively by treating a semiconductor substrate having a doped silicon oxide film at a high temperature in an atmosphere of oxygen with a plasma nitride film pattern as mask after it is formed on the substrate. CONSTITUTION:A boro-silicated glass film 21 is formed on an N type semiconductor substrate 20 and a plasma nitride film 22 is formed thereon. Then, with a photoresist pattern 23 as mask, the plasma nitride film 22 is etched. At this point, CF4 plasma method is used. If so, as the film 22 is etched very fast whereas the boro- silicated glass film 22 is slow in the etching, the boro-silicated glass film 22 is left unetched thereby allowing the formation of a plasma nitride film pattern 22' with a desired pattern width. Thereafter, the resist pattern 23 is removed and the substrate 20 undergoes a heat treatment in an atmosphere of oxygen to obtain a diffused layer 24 selectively.
JP9450480A 1980-07-09 1980-07-09 Production of semiconductor device Pending JPS5718320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9450480A JPS5718320A (en) 1980-07-09 1980-07-09 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9450480A JPS5718320A (en) 1980-07-09 1980-07-09 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5718320A true JPS5718320A (en) 1982-01-30

Family

ID=14112138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9450480A Pending JPS5718320A (en) 1980-07-09 1980-07-09 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5718320A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4974880A (en) * 1972-11-20 1974-07-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4974880A (en) * 1972-11-20 1974-07-19

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