JPS57197834A - Manufacture of insulated and isolated substrate - Google Patents

Manufacture of insulated and isolated substrate

Info

Publication number
JPS57197834A
JPS57197834A JP56083686A JP8368681A JPS57197834A JP S57197834 A JPS57197834 A JP S57197834A JP 56083686 A JP56083686 A JP 56083686A JP 8368681 A JP8368681 A JP 8368681A JP S57197834 A JPS57197834 A JP S57197834A
Authority
JP
Japan
Prior art keywords
substrate
crystal
end part
dioxide
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56083686A
Other languages
Japanese (ja)
Other versions
JPS6226182B2 (en
Inventor
Takanobu Satou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP56083686A priority Critical patent/JPS57197834A/en
Publication of JPS57197834A publication Critical patent/JPS57197834A/en
Publication of JPS6226182B2 publication Critical patent/JPS6226182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent the growth of abnormal rise on the end part of polycrystalline silicon for the elimination of cracks or chip of a substrate, by forming a slant on the end part of a single-crystal silicon substrate by anisotropic etching. CONSTITUTION:An Si dioxide film 21 is formed on the surface of the single- crystal Si substrate 20 to remove a V-shaped groove part of the Si dioxide film 21 with the surface of the substrate exposed for the etching of the single-crystal Si substrate 20 with the Si dioxide film 21 as a mask. Thus, a V-shaped groove 22 is formed by the anisotropy of crystal axis threat with the end part of the single-crystal Si substrate 20 etched for slant. Then, Si dioxide covers again the entire surface thereon to form the first polycrystalline Si film 23a thereon. Thereafter, after the removal of the Si dioxide on the end part, the second polycrystalline Si layer 23b is formed.
JP56083686A 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate Granted JPS57197834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56083686A JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56083686A JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Publications (2)

Publication Number Publication Date
JPS57197834A true JPS57197834A (en) 1982-12-04
JPS6226182B2 JPS6226182B2 (en) 1987-06-08

Family

ID=13809369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56083686A Granted JPS57197834A (en) 1981-05-29 1981-05-29 Manufacture of insulated and isolated substrate

Country Status (1)

Country Link
JP (1) JPS57197834A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
WO2023199656A1 (en) * 2022-04-15 2023-10-19 信越半導体株式会社 Method for producing polysilicon wafer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029423U (en) * 1973-07-09 1975-04-03
JPS5386775A (en) * 1976-11-08 1978-07-31 Raychem Sa Nv Thermal recovery hollow part andits using method and its making method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029423U (en) * 1973-07-09 1975-04-03
JPS5386775A (en) * 1976-11-08 1978-07-31 Raychem Sa Nv Thermal recovery hollow part andits using method and its making method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
WO2023199656A1 (en) * 2022-04-15 2023-10-19 信越半導体株式会社 Method for producing polysilicon wafer
JP2023157404A (en) * 2022-04-15 2023-10-26 信越半導体株式会社 Method for manufacturing polysilicon wafer

Also Published As

Publication number Publication date
JPS6226182B2 (en) 1987-06-08

Similar Documents

Publication Publication Date Title
MY107059A (en) Method of preparing silicon carbide surfaces for crystal growth.
IL137607A0 (en) Crystal ion-slicing of single-crystal films
KR880014691A (en) Manufacturing Method of Semiconductor Device
JPS57176772A (en) Semiconductor device and manufacture thereof
JPS57197834A (en) Manufacture of insulated and isolated substrate
JPS5654049A (en) Semiconductor device
JPS57124440A (en) Compound etching method
JPS55158633A (en) Dielectric insulation isolating wafer with reference pattern
JPS5795633A (en) Etching method
JPS57100733A (en) Etching method for semiconductor substrate
JPS5688356A (en) Manufacture of memory cell
EP0067738A3 (en) Method of reducing encroachment in a semiconductor device
JPS57148344A (en) Manufacturing equipment for semiconductor
JPS5687339A (en) Manufacture of semiconductor device
JPS53146300A (en) Production of silicon carbide substrate
JPS5243369A (en) Flat etching method for silicon
SE8504828D0 (en) INFRAROD DETECTOR
JPS57109353A (en) Semiconductor device
JPS5742143A (en) Manufacture of semiconductor device
JPS57138162A (en) Manufacture of semiconductor device
JPS5783042A (en) Manufacture of semiconductor device
JPS5575221A (en) Manufacturing semiconductor
JPS57196793A (en) Epitaxial growth method
JPS6439745A (en) Manufacture of semiconductor substrate for integrated circuit device
JPS5536983A (en) Liquid phase growth method