JPS57211268A - Image sensor and manufacture thereof - Google Patents

Image sensor and manufacture thereof

Info

Publication number
JPS57211268A
JPS57211268A JP56095892A JP9589281A JPS57211268A JP S57211268 A JPS57211268 A JP S57211268A JP 56095892 A JP56095892 A JP 56095892A JP 9589281 A JP9589281 A JP 9589281A JP S57211268 A JPS57211268 A JP S57211268A
Authority
JP
Japan
Prior art keywords
substrate
sensitivity
incident light
layers
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56095892A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6110985B2 (2
Inventor
Kiyoshi Ozawa
Nobuyoshi Takagi
Satoru Kawai
Toshiro Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56095892A priority Critical patent/JPS57211268A/ja
Publication of JPS57211268A publication Critical patent/JPS57211268A/ja
Publication of JPS6110985B2 publication Critical patent/JPS6110985B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56095892A 1981-06-23 1981-06-23 Image sensor and manufacture thereof Granted JPS57211268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56095892A JPS57211268A (en) 1981-06-23 1981-06-23 Image sensor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56095892A JPS57211268A (en) 1981-06-23 1981-06-23 Image sensor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57211268A true JPS57211268A (en) 1982-12-25
JPS6110985B2 JPS6110985B2 (2) 1986-04-01

Family

ID=14149956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56095892A Granted JPS57211268A (en) 1981-06-23 1981-06-23 Image sensor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57211268A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63291466A (ja) * 1987-05-25 1988-11-29 Nippon Sheet Glass Co Ltd 固体撮像装置
US8253142B1 (en) * 1999-08-27 2012-08-28 Sony Corporation Solid-state imaging device and method of fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63291466A (ja) * 1987-05-25 1988-11-29 Nippon Sheet Glass Co Ltd 固体撮像装置
US8253142B1 (en) * 1999-08-27 2012-08-28 Sony Corporation Solid-state imaging device and method of fabricating the same
US8729650B2 (en) 1999-08-27 2014-05-20 Sony Corporation Solid-state imaging device and method of fabricating the same

Also Published As

Publication number Publication date
JPS6110985B2 (2) 1986-04-01

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