JPS57211269A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS57211269A
JPS57211269A JP56098901A JP9890181A JPS57211269A JP S57211269 A JPS57211269 A JP S57211269A JP 56098901 A JP56098901 A JP 56098901A JP 9890181 A JP9890181 A JP 9890181A JP S57211269 A JPS57211269 A JP S57211269A
Authority
JP
Japan
Prior art keywords
evaporated
tin
coated
difficult
chemical reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56098901A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376031B2 (2
Inventor
Mitsutoshi Hibino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56098901A priority Critical patent/JPS57211269A/ja
Publication of JPS57211269A publication Critical patent/JPS57211269A/ja
Publication of JPH0376031B2 publication Critical patent/JPH0376031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
JP56098901A 1981-06-22 1981-06-22 Semiconductor element Granted JPS57211269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56098901A JPS57211269A (en) 1981-06-22 1981-06-22 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56098901A JPS57211269A (en) 1981-06-22 1981-06-22 Semiconductor element

Publications (2)

Publication Number Publication Date
JPS57211269A true JPS57211269A (en) 1982-12-25
JPH0376031B2 JPH0376031B2 (2) 1991-12-04

Family

ID=14232027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56098901A Granted JPS57211269A (en) 1981-06-22 1981-06-22 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS57211269A (2)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566026A (en) * 1984-04-25 1986-01-21 Honeywell Inc. Integrated circuit bimetal layer
US4574298A (en) * 1982-12-27 1986-03-04 Tokyo Shibaura Denki Kabushiki Kaisha III-V Compound semiconductor device
JPS6449243A (en) * 1987-08-20 1989-02-23 Nec Corp Semiconductor integrated circuit device
US4816424A (en) * 1983-03-25 1989-03-28 Fujitsu Limited Method of producing semiconductor device having multilayer conductive lines
US4903110A (en) * 1987-06-15 1990-02-20 Nec Corporation Single plate capacitor having an electrode structure of high adhesion
US5227335A (en) * 1986-11-10 1993-07-13 At&T Bell Laboratories Tungsten metallization

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574298A (en) * 1982-12-27 1986-03-04 Tokyo Shibaura Denki Kabushiki Kaisha III-V Compound semiconductor device
US4816424A (en) * 1983-03-25 1989-03-28 Fujitsu Limited Method of producing semiconductor device having multilayer conductive lines
US4566026A (en) * 1984-04-25 1986-01-21 Honeywell Inc. Integrated circuit bimetal layer
US5227335A (en) * 1986-11-10 1993-07-13 At&T Bell Laboratories Tungsten metallization
US4903110A (en) * 1987-06-15 1990-02-20 Nec Corporation Single plate capacitor having an electrode structure of high adhesion
JPS6449243A (en) * 1987-08-20 1989-02-23 Nec Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPH0376031B2 (2) 1991-12-04

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