JPS57211785A - Electrode formation of semiconductor device - Google Patents

Electrode formation of semiconductor device

Info

Publication number
JPS57211785A
JPS57211785A JP56097976A JP9797681A JPS57211785A JP S57211785 A JPS57211785 A JP S57211785A JP 56097976 A JP56097976 A JP 56097976A JP 9797681 A JP9797681 A JP 9797681A JP S57211785 A JPS57211785 A JP S57211785A
Authority
JP
Japan
Prior art keywords
resin film
polyimide resin
electrode
hole
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56097976A
Other languages
Japanese (ja)
Inventor
Yasoo Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP56097976A priority Critical patent/JPS57211785A/en
Publication of JPS57211785A publication Critical patent/JPS57211785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate the positioning of an electrode by a method wherein selfpositioning to a source, drain, each electrode and a gate electrode is performed by using an etching hole with a V section formed by etching a polyimide resin film by hydrazine group solution. CONSTITUTION:After coating and covering a polyimide resin film 13 on the surface of a semiconductor substrate 11, a resist film 14 is formed on the said resin film. A transparent hole which is equivalent to electrode width is provided at the said resist film. Next, the polyimide resin film is etched by hydrazine group solution through the said hole and an etching hole 16 with V section is perforated into the polyimide resin film. After removing the polyimide resin film, electrode materials 19, 20 contacted with the exposed semiconductor substrate are coated and and covered through the V-shaped etching hole.
JP56097976A 1981-06-23 1981-06-23 Electrode formation of semiconductor device Pending JPS57211785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56097976A JPS57211785A (en) 1981-06-23 1981-06-23 Electrode formation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56097976A JPS57211785A (en) 1981-06-23 1981-06-23 Electrode formation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57211785A true JPS57211785A (en) 1982-12-25

Family

ID=14206688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56097976A Pending JPS57211785A (en) 1981-06-23 1981-06-23 Electrode formation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57211785A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551905A (en) * 1982-12-09 1985-11-12 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
JPS6237972A (en) * 1985-08-13 1987-02-18 Matsushita Electronics Corp Metal-electrode forming method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551905A (en) * 1982-12-09 1985-11-12 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
JPS6237972A (en) * 1985-08-13 1987-02-18 Matsushita Electronics Corp Metal-electrode forming method

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