JPS5759331A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5759331A
JPS5759331A JP55133805A JP13380580A JPS5759331A JP S5759331 A JPS5759331 A JP S5759331A JP 55133805 A JP55133805 A JP 55133805A JP 13380580 A JP13380580 A JP 13380580A JP S5759331 A JPS5759331 A JP S5759331A
Authority
JP
Japan
Prior art keywords
film
stepped section
stepped
psg
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55133805A
Other languages
Japanese (ja)
Inventor
Kenji Sugishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55133805A priority Critical patent/JPS5759331A/en
Publication of JPS5759331A publication Critical patent/JPS5759331A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To increase the reliability for the subject semiconductor device by a method wherein a resist film is applied on the stepped section on a substrate and the side of the stepped section is formed in tapered shape by repeatedly performing an incineration of oxygen-plasma and CF4 gas-etching alternately. CONSTITUTION:When a phosphor-silicate glass (PSG) film 3 is formed on the Al wiring layer 2 on a substrate 1, the side of the stepped section is turned to a sharp stepped form. On this stepped part, a resist film 4 is coated, the surface of the resist film 4 is incinerated and removed by performing an oxygen-plasma etching, and the PSG film 3 located at the corner part of the upper end of the stepped section is exposed. Then, an etching is performed on the PSG film which was exposed by a gas-plasma etching. Another PSG film is grown on the PSG film 3 and a tapered shape is formed. An al wiring layer 5 is coated on the above. Accordingly, the stepped section is formed into a tapered shape easily and the reliability of the semiconductor device can be increased.
JP55133805A 1980-09-26 1980-09-26 Manufacture of semiconductor device Pending JPS5759331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55133805A JPS5759331A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55133805A JPS5759331A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5759331A true JPS5759331A (en) 1982-04-09

Family

ID=15113440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55133805A Pending JPS5759331A (en) 1980-09-26 1980-09-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5759331A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123234A (en) * 1982-12-28 1984-07-17 Tohoku Metal Ind Ltd Microscopic processing method
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123234A (en) * 1982-12-28 1984-07-17 Tohoku Metal Ind Ltd Microscopic processing method
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

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