JPS5722417B2 - - Google Patents
Info
- Publication number
- JPS5722417B2 JPS5722417B2 JP12420479A JP12420479A JPS5722417B2 JP S5722417 B2 JPS5722417 B2 JP S5722417B2 JP 12420479 A JP12420479 A JP 12420479A JP 12420479 A JP12420479 A JP 12420479A JP S5722417 B2 JPS5722417 B2 JP S5722417B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12420479A JPS5649532A (en) | 1979-09-28 | 1979-09-28 | Manufacture of silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12420479A JPS5649532A (en) | 1979-09-28 | 1979-09-28 | Manufacture of silicon substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649532A JPS5649532A (en) | 1981-05-06 |
| JPS5722417B2 true JPS5722417B2 (mo) | 1982-05-13 |
Family
ID=14879557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12420479A Granted JPS5649532A (en) | 1979-09-28 | 1979-09-28 | Manufacture of silicon substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649532A (mo) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4597804A (en) * | 1981-03-11 | 1986-07-01 | Fujitsu Limited | Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein |
| JPS58212162A (ja) * | 1982-06-03 | 1983-12-09 | Matsushita Electronics Corp | 半導体装置およびその製造方法 |
| US4505759A (en) * | 1983-12-19 | 1985-03-19 | Mara William C O | Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals |
| JPH02224249A (ja) * | 1988-11-29 | 1990-09-06 | Nec Corp | Ｓｉ基板の製造方法 |
| JP2013030723A (ja) * | 2011-06-24 | 2013-02-07 | Covalent Materials Corp | シリコンウェーハの製造方法 |
-
1979
- 1979-09-28 JP JP12420479A patent/JPS5649532A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5649532A (en) | 1981-05-06 |